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Unformatted text preview: Randall Robert 9771 EE 3221 Sec 5 Partner: Jason McAllister Lab #2 EXP.#13 OBJECTIVE: The objective is to study the input and output characteristics of bipolar and FET follower circuits. PROCEDURE: PART 1 Connect the circuit in 1A: V(A) V(B) V(A)V(B) ∆V(B) r(be) r(be)=n*V(t)/I(B) 8.044V 0.9745V 7.369V 3.528KΩ 7.040V 0.6713V 6.369V 0.0032V 3.2KΩ 4.082KΩ r (be)= ∆V(B)/1μA=0.0032/1μA =3.2KΩ I (B)= (VA – VB) / 1 MΩ=6.369/1 MΩ=6.369μA r(be)= n*V(t)/I(B)=26mV/7.369μA =3.528 KΩ r(be)= n*V(t)/I(B)= 26mV/6.369μA =4.082 KΩ How much does VB change? The change in VB is 0.0032V. How does your measured value of β conventional formula? 4.082KΩ. COMPARED TO 3.2KΩ. How does this compare to the diode resistance studied in experiment 3? r(d)=26mV/I(d) which is typically only a few ohms~10 For what theoretical value of β would 1 watt be dissipated in the transistor?...
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This note was uploaded on 02/21/2012 for the course EE 3232 taught by Professor Feldman during the Fall '10 term at LSU.
 Fall '10
 Feldman

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