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Unformatted text preview: 13 EB junction is forward-biased are injected to the base. e Base is short so before they recombine with holes in the base they will be swept by electric field of reversed biased BC junction. + n emitter collector B + n n h e sub-collector v V BE 7 . = C E Depletion region Forward bias Depletion region Reverse bias base B C I I = , : current gain (common emitter) T BE V V sat B e I I = , :thermal voltage T V T BE V V CS C e I I = 2 mA 3 mA 4 mA 1 mA usually linear A I B 10 = A I B 20 = A I B 30 = A I B 40 = the slope will give you an output resistance Early effect similar to channel length modulation, here you base region thickness is modulated by . CB V Early voltage (+Ve value) (-20v) A V + = A CE B C V V I I 1 14 ( ) 1 1 1 < + = = + = = + E C B E E B C I I I I I I I , : common base current gain....
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This note was uploaded on 02/19/2012 for the course ECE 455 taught by Professor Mohammadi during the Fall '10 term at Purdue University-West Lafayette.
- Fall '10