Week4 - Dynamic Behavior (determined by various capacitors)...

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Dynamic Behavior (determined by various capacitors) Overlap capacitance C GSO = C GDO = C ox X d W = C o W C o = C gso = C gdo Channel Capacitance cut-off resistive saturation C GC = C GB C GB = 0 C GC = C GCS gate gate C GC = C GCS +C GCD C GCD =0, C GCB =0 channel body uniform channel C GB C GCS C GCD C GC C G (overlap+channel) cut-off C ox WL 0 0 C ox WL C ox WL+ 2C o W resistive 0 C ox WL/2 C ox WL/2 C ox WL C ox WL+ 2C o W saturation 0 2/3 C ox WL 0 2/3C ox WL 2/3C ox WL+ 2C o W around threshold transistor is very non-linear x d x d x d x d L W S D n + n + G V D L d n + n + S D G B n + n + S D G n + n + S D G B B V T V GS Gate Cap
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Junction Capacitance ( diffusion capacitance ) between source/drain and body by applying bias to drain depletion region becomes larger C diff = C bottom-plate junction + C sidewall junction = C j area + C jsw perimeter = C j L s W + C jsw (2L s + W) various capacitances C ox , C o : determine gate cap C j , m j , φ b : related to bottom cap
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Week4 - Dynamic Behavior (determined by various capacitors)...

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