Week4 - Dynamic Behavior(determined by various capacitors...

Info iconThis preview shows pages 1–3. Sign up to view the full content.

View Full Document Right Arrow Icon
Dynamic Behavior (determined by various capacitors) Overlap capacitance C GSO = C GDO = C ox X d W = C o W C o = C gso = C gdo Channel Capacitance cut-off resistive saturation C GC = C GB C GB = 0 C GC = C GCS gate gate C GC = C GCS +C GCD C GCD =0, C GCB =0 channel body uniform channel C GB C GCS C GCD C GC C G (overlap+channel) cut-off C ox WL 0 0 C ox WL C ox WL+ 2C o W resistive 0 C ox WL/2 C ox WL/2 C ox WL C ox WL+ 2C o W saturation 0 2/3 C ox WL 0 2/3C ox WL 2/3C ox WL+ 2C o W around threshold transistor is very non-linear x d x d x d x d L W S D n + n + G V D L d n + n + S D G B n + n + S D G n + n + S D G B B V T V GS Gate Cap
Background image of page 1

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Junction Capacitance ( diffusion capacitance ) between source/drain and body by applying bias to drain depletion region becomes larger C diff = C bottom-plate junction + C sidewall junction = C j area + C jsw perimeter = C j L s W + C jsw (2L s + W) various capacitances C ox , C o : determine gate cap C j , m j , φ b : related to bottom cap
Background image of page 2
Image of page 3
This is the end of the preview. Sign up to access the rest of the document.

This note was uploaded on 02/19/2012 for the course ECE 456 taught by Professor Mohammadi during the Spring '09 term at Purdue.

Page1 / 4

Week4 - Dynamic Behavior(determined by various capacitors...

This preview shows document pages 1 - 3. Sign up to view the full document.

View Full Document Right Arrow Icon
Ask a homework question - tutors are online