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week14 - Random Access Memory BL BL WL VDD You can...

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Random Access Memory BL You can read/write at comparable speed BL WL DD V Q Q Six transistor CMOS RAM Read Operation active word line BL BL , are precharged to DD V eq ckt : (Q = 1) BL BL WL DD V 0 = Q min DD V 2 . 1 × W Sense amp + Size of pass transistor has to be smaller than M1 to avoid read upset if the lines are precharged to better performance can be achieved + no read upset 2 DD V 1 > L W Pass L W NMOS Detect the difference between the two lines
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