97上電子學一期ä¸

97上電子學一期ä¸

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Microelectronic Circuits I (Midterm) date: 2008/11/13 (Thur) time:15:30 ~ 17:20 1. (20%) A p + -n diode is one in which the doping concentration in the p region is much greater than that in the n region. In such a diode, the forward current is mostly due to hole injection across the junction. Show that ) 1 ( 2 - × = T V V D p p i P e N L D Aqn I I For the specific case in which 3 16 / 10 3 cm N D × = , s cm D p / 10 2 = , s p μ τ 05 . 0 = , and , 10 2 4 m A = find s I and the voltage V obtained when mA I 2 . 0 = . Assume operation at 300K where 3 10 / 10 5 . 1 cm n i × = . Also, calculate the excess minority- carrier charge and the value of the diffusion capacitance at mA I 2 . 0 = . 2. (20%) An ideal differentiator is implemented as Fig (a) . Note that R F C 1 =1 μ s. (1) With such input waveform, please draw the output waveform. Please label all of the voltage and time information in your waveform. Note that transition time means that the time that it needs to take for the input voltage to change from 0V
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97上電子學一期ä¸

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