97上電子學一期æœ&laqu

97上電子學一期æœ&laqu

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Unformatted text preview: Microelectronic Circuits I (Final Exam) date: 2008/1/15 (Thur) time:15:30 ~ 17:20 1. (20%) Fig. 1 shows a BJT circuit with β =100 and the capacitors are sufficiently large. (a) For V BB = 5 V, find the dc voltage V A and V B . What is the small-signal gain v o /v s ? (10%) (b) Repeat the analysis in (a) with V BB = 1 V. (5%) (c) Repeat the analysis in (a) with V BB = -3 V. (5%) . Fig. 1 2. (20%) MOSFET is one of the most important devices in this era. As the consequence, it is essential to understand the fundamental operation of the device. Please answer the following questions by schmatic drawing and few sentances/equations. (a) Please draw the cross section of a NMOS. In addition, please also indicate the induced channel shape under (1) no V DS ; (2) small V DS ; (3) V DS > V GS . (4%) (b) Please derive i D-v DS relationship as the MOSFET in triode region. (6%) (c) Please explain the channel-length modulation and its effect in drain current....
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This note was uploaded on 02/21/2012 for the course EE 101 taught by Professor 張捷力 during the Spring '07 term at National Taiwan University.

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97上電子學一期æœ&laqu

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