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i_thesis - SIMULATION AND MODELING OF SONOS NON-VOLATILE...

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SIMULATION AND MODELING OF SONOS NON-VOLATILE MEMORY by ASHA RANI A Thesis Submitted to the Graduate Faculty of George Mason University In Partial fulfillment of The Requirements for the Degree of Master of Science Electrical Engineering Committee: _________________________________ Dr. Qiliang Li, Dissertation Director _________________________________ Dr. M.Rao Mulpuri, Committee Member _________________________________ Dr. Alok Berry, Committee Member _________________________________ Dr. Andre Manitius, Department Chair _________________________________ Dr. Lloyd J. Griffiths, Dean, The Volgenau School of Information Technology and Engineering Date:_____________________________ Fall Semester 2010 George Mason University, Fairfax, VA
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Simulation and Modeling of SONOS Non-Volatile Memory This thesis is submitted in partial fulfillment of the requirements for the degree of Master of Science at George Mason University By Asha Rani Master of Science George Mason University, 2010 Director: Dr. Qiliang Li, Assistant Professor, Department of Electrical and Computer Engineering Fall Semester George Mason University Fairfax, VA
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ii Acknowledgments There are many people who have helped me through various stages of my thesis work. First of all I am heartily thankful to my advisor, Dr. Qiliang Li, whose encouragement, guidance and support from initial to the final level enabled me to develop an understanding of the subject. I am thankful to XiaoXiao Zhu and Yang Yang for their guidance in learning the Synopsys TCAD tools. The discussions and cooperation with Aveek Gangopadhyay and Anindya Nath have contributed substantially to this work. I would like to thank Dr. M. Rao Mulpuri for his support and suggestions. I would also like to thank Dr. Alok Berry who agreed to serve on my examining committee on very short notice. Finally I take this opportunity to express my profound gratitude to my beloved parents for their moral support during my study in George Mason University.
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iii Table of Contents Page List of Figures…………………………………………………………………………… .iv Chapter 1 Introduction and background of FLASH memory Technology 1.1. Introduction of recent developments of Flash memory …………………………1 1.2. Applications ……………………………………………………………………... 3 1.3. Classification of Semiconductor Devices ………………………………………. 5 1.4. Concept of Floating Gate Devices …………………………………………… ..10 1.5. Basic Concept of Charge Trapping Devices …………………………………… 13 Chapter 2 Design of SONOS Non-Volatile Memory Devices 2.1. Evolution of SONOS device ……………………………………………………15 2.2. Advantages of SONOS over FLASH memory…………………………………20 2.3. Structure and Theory of SONOS nonvolatile memory device ……………… ...21 2.4. Physical operation of SONOS device …………………………………………..38 2.5. Device Physics …………………………………………………………………. 41 2.6. Characteristics ………………………………………………………………….5 2 2.7. Scaling Issues
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