Compe475_T1_Fa10

# Compe475_T1_Fa10 - CompE 475 Mid-term exam 1 Fa10x0404L...

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CompE 475 Mid-term exam 1 Fa10x0404L Name__________________ Compe475_T1_Fa10.doc 1 Mid-term exam, Part 1 - closed book/notes Definitions, 2 Points each: Define the terms below - use complete sentences - diagrams are allowed. 1) t su 2) Read Mostly Memory 3) RAM 4) V t (Logic Threshold Voltage) 5) Memory Refresh 6) Metastability 7) DRAM 8) Multiplexed Address 9) Bus Contention 10) E 2 PROM

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CompE 475 Mid-term exam 1 Fa10x0404L Name__________________ Compe475_T1_Fa10.doc 2 Mid-term exam - Part 1 - CLOSED book/notes 11) What are the nominal noise margins using the data sheets you have been provided with for the XOR gates and flip-flops? 15 pts using XOR gates driving XOR gates both Vcc = 3.3V: for a) Logic ‘0’ and b) Logic ‘1’ a)_________ V b)_________ V using flip-flops driving flip-flops both Vcc = 5.0V: for a) Logic ‘0’ and b) Logic ‘1’ b)_________ V c)_________ V using XOR gates @Vcc=3.3V driving flip-flops @Vcc = 5.0V: for a) Logic ‘0’ and b) Logic ‘1’ d)_________ V
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## This note was uploaded on 02/26/2012 for the course COMPE 475 taught by Professor Staff during the Spring '08 term at San Diego State.

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Compe475_T1_Fa10 - CompE 475 Mid-term exam 1 Fa10x0404L...

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