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The epoxy Unfair? \, ECE 131A Solid-State Materials & Devices Examination 2/ Spring 2011 1. The cut-in voltage V7 = 0 and the forward resistance rf = O for both diodes in the circuit
given below. The breakdown voltage for D2 is Vz = 3V with r2 = 0. 3) Determine the transfer characteristic, vo vs. vi. Then, give a plot for it over the range of values -10V 3 vi 5 10V.
b) Determine the plot for i vs. V, over the same range of values for V, as in part (a). (25%) 2. The bipolar junction transistor (BIT) in the circuit given below has = 100, VT = 26mV and VEB(OII) = 0.7V.
-Vcc = -10V 3) Obtain the large-signal (DC) equivalent, model for the circuit. b) Determine the DC load line and the Q-point for this circuit. Then, give an appropriately
labelled sketch for them c) Calculate the output voltage v0. d) Calculate the power, PO, dissipated in the BJT. (25 %) 3 . The bipolar junction transistor (BJT) in the circuit given below has the following parameters:
B = 100, VT = 26mV and VBE(on) = 0.7V. The input voltage VB = 5.7 + vb(t) V, where vb(t) is
the small-signal component of V3. +_V0c = 10V a) Determine the Q-po'mt := (V cm, ICQ) and the output voltage Voq. b) Determine the DC load line equation and then give a sketch for it and identify on it the Q-
point. c) Obtain the small-signal (AC) equivalent model for the circuit. (1) Obtain the expression for the total output voltage vo(t). (25%)“ 4 - The transistor used in the circuit given in the ﬁgure below has VBE(on)=0.7V. The supply voltage
VCC = 3V , and from measurement it is found that VB = -lV. +Vcc “VCC 3) Determine a and [3 for the transistor.
b) Calculate the power Pt dissipated in the transistor. (29%) ...
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This note was uploaded on 02/27/2012 for the course CHEMISTRY/ CH/ECE/PH/ taught by Professor Faculty during the Spring '08 term at Cooper Union.
- Spring '08