E4301HW6-05

E4301HW6-05 - in class. It is repeated below: R = 1/(dI/dV)...

Info iconThis preview shows page 1. Sign up to view the full content.

View Full Document Right Arrow Icon
E4301 3/1/05 HW Set #6 1. The I-V characteristic of a tunnel diode (Esaki Diode) fabricated using gallium antimonide (GaSb) is described by the empirical formula as shown in the notes or as Equation 5 on Page 260 in the Sze reference and as given
Background image of page 1
This is the end of the preview. Sign up to access the rest of the document.

Unformatted text preview: in class. It is repeated below: R = 1/(dI/dV) = -[(V/V p-1)Ip/V p exp (1-V/V p )] Using Ip = 20 mA and V p = 0.2 V, find the largest negative differential resistance and the voltage at which it occurs. 2. M & K 3.1 3. M & K 3.2 Due: 3/22/05...
View Full Document

This note was uploaded on 02/28/2012 for the course EE 4301 taught by Professor Laibowitz during the Spring '10 term at Columbia.

Ask a homework question - tutors are online