143f2010-10-soln - EE143 HW#10 Solutions Fall 2010 Problem...

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EE143 HW#10 Solutions Fall 2010 Problem 1 [1] Minimum size contact = 2 x2  Minimum contact-contact spacing (lithography limit) = 2 [3] Minimum thin-oxide-region underlap of contact = [4] Minimum source/drain contact to gate spacing = 2 [5] Minimum poly-Si width (L) = 4 [This is given] [6] Minimum gate overlap of field-oxide region = 2 [7] Minimum metal-metal spacing = 3 [8] Minimum metal overlap of contact = [9] Minimum metal width (lithography limit) = 2 Contact hole V D V S Active region Poly Al V G 1 8 3 2 7 6 5 4 7 8 9
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Problem 2 6 4 5 2 1 3 7 8 9 2. Min contact overlap = 4. Min gate length = 5. Min gate width = 7. Min poly to diffusion = 8. Min poly contact to thin oxide = 9. Min metal to metal = 1. Min contact hole = 3. Min contact to gate = 6. Min gate overlap of field oxide =
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Problem 3 1. poly-poly spacing = 2 2. gate overlap of thick oxide = 2 3. poly-thin oxide spacing = 4. min feature = 2 5. contact underlap = 6. metal overlap contact = 7. poly contact to thin oxide = 2 8. min metal-metal spacing= 3
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