# 143f2010-11 - N.CHEUNG EE143 Fall 2010 Homework Assignment 11(Due Nov 22 Tue 9am Required Reading(1 EE143 Lecture Notes(2 Visit the Device

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N.CHEUNG EE143, Fall 2010 Homework Assignment # 11 (Due Nov 22, Tue 9am !!!) Required Reading (1) EE143 Lecture Notes (2) Visit the Device Visualization website http://jas.eng.buffalo.edu/ Start with http://jas.eng.buffalo.edu/education/mos/mosCap/biasBand10.html (a) Run all four simulation of the MOS capacitors (set Q ox =0 first and then see effect of Q ox later. (b) Run all three MOSFET simulations on http://jas.eng.buffalo.edu/education/mos/mosfet/mosfet.html (3) Section of Streetman Chapter 8 on MOS ( in Bspace Resources Directory) Problem 1 Simple threshold voltage calculations (a) Calculate the threshold voltage of an NMOS transistor when the p-substrate concentration is 2 10 16 cm -3 , n+ poly-Si is used as the gate material, and a gate oxide thickness of 90nm. Assume there is no body bias and no oxide charges. (b) Repeat part (a) for a PMOS transistor with n-substrate concentration = 2 10 16 cm -3 . Gate material and oxide thickness are the same. Problem 2 Threshold voltage calculation with Oxide Interface Charge and Threshold Implant (a) Poly-Si gate (n + ) NMOS devices are fabricated with 5 10 15 / cm 3 boron-doped substrate. Assuming the Si/SiO2 interface charge Q f to be +3 10 10 q cm -2 , find the required gate oxide thickness for V

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## This note was uploaded on 03/03/2012 for the course EECS 142 taught by Professor Ee142 during the Spring '04 term at University of California, Berkeley.

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143f2010-11 - N.CHEUNG EE143 Fall 2010 Homework Assignment 11(Due Nov 22 Tue 9am Required Reading(1 EE143 Lecture Notes(2 Visit the Device

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