143s2006-final - 1 Spring 2006 UNIVERSITY OF CALIFORNIA...

Info iconThis preview shows pages 1–4. Sign up to view the full content.

View Full Document Right Arrow Icon

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
This is the end of the preview. Sign up to access the rest of the document.

Unformatted text preview: 1 Spring 2006 UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences EE143 Final Exam Family Name _______________________ First name______________________SID_______________ Signature______________________________________________________________ Instructions: DO ALL WORK ON EXAM PAGES Make sure your copy of the exam paper has 11 pages (including cover page) This is a 3-hr exam (12 sheets of handwritten notes allowed) Problem 1 (40 points)________________ Problem 2 (20 points)_______________ Problem 3 (40 points) ________________ Problem 4 (40 points) ________________ Problem 5 (35 points) ________________ Problem 6 (25 points) ________________ TOTAL (200 points) __________________ Information which may be useful s =1.036 10-12 F/cm for Si ox =3.45 10 -13 F/cm for SiO 2 q =1.6 10-19 coulombs Boltzmann constant k = 8.62 10-5 eV/K n i of Si= 1.45 10 10 cm-3 at 300K E g of Si = 1.12 eV at 300K Electron Affinity of Si =4.15 eV Electric potential =(E f-E i )/q n= n i exp(q /kT) x d = [ 2 s q ( i-V a ) ( 1 N a + 1 N d ) ] 1/2 MOS: V GB = MS +V ox +V Si V FB = MS- 1 C ox [ Q f + 0 x ox x ox (x) x ox dx ] MOSFET I-V (n-channel): I DS = n W L C ox [ (V G- V T ) V DS- V DS 2 /2 ] (below saturation) I Dsat = n W L C ox [(V G-V T ) 2 /2] (above saturation) Grading: Whenever possible, use sketches to support your explanation. Show correct units and algebraic sign for numerical answers. No partial credit for numerical answers orders of magnitude off. 2 Problem 1 Lab Questions (40 points total) (a) (10 points) In Cory 218, we only have the following processing equipment: Mask aligner Spinning, baking, and development setups for photoresist and spin-on glass Wet chemical bench for cleaning and wet etching Oxidation furnace Annealing furnace Al evaporator. Describe a process sequence using ONLY the available equipment in Cory 218 to fabricate the following DRAM structure, which is simply an Al-gate n-channel MOSFET connected to a capacitor with Al and n+ Si as electrodes. Process Description Cross-section Al Gate oxide boundary n+ Si boundary Capacitor MOSFET Al Gate oxide boundary n+ Si boundary Capacitor MOSFET Field Oxide Al Gate p-type Si Gate oxide Al electrode for capacitor Al Field Oxide Al Gate p-type Si Gate oxide Al electrode for capacitor Al 3 Problem 1 Lab Questions continued (b) (8 points) Suppose the lab has an ion implanter, which step(s) in the process sequence will you change...
View Full Document

This note was uploaded on 03/03/2012 for the course EECS 142 taught by Professor Ee142 during the Spring '04 term at University of California, Berkeley.

Page1 / 11

143s2006-final - 1 Spring 2006 UNIVERSITY OF CALIFORNIA...

This preview shows document pages 1 - 4. Sign up to view the full document.

View Full Document Right Arrow Icon
Ask a homework question - tutors are online