1
Spring 2006
UNIVERSITY OF CALIFORNIA
College of Engineering
Department of Electrical Engineering and Computer Sciences
EE143 Final
Exam
Family Name _______________________
First name______________________SID_______________
Signature______________________________________________________________
Instructions: DO ALL WORK ON EXAM PAGES
Make sure your copy of the exam paper has 11 pages (including cover page)
This is a 3hr exam (12 sheets of handwritten notes allowed)
Problem 1 (40 points)________________
Problem 2 (20 points)_______________
Problem 3 (40 points) ________________
Problem 4 (40 points) ________________
Problem 5 (35 points) ________________
Problem 6 (25 points) ________________
TOTAL (200 points) __________________
Information which may be useful
ε
s
=1.036
×
10
12
F/cm for Si
ε
ox
=3.45
×
10
13
F/cm for SiO
2
q =1.6
×
10
19
coulombs
Boltzmann constant k = 8.62
×
10
5
eV/K
n
i
of Si= 1.45
×
10
10
cm
3
at 300K
E
g
of Si = 1.12 eV at 300K
Electron Affinity of Si =4.15 eV
Electric potential
φ
=(E
f
E
i
)/q
n= n
i
exp(q
φ
/kT)
x
d
=
[
2
ε
s
q
(
φ
i
V
a
) (
1
N
a
+
1
N
d
)
]
1/2
MOS: V
GB
=
φ
MS
+V
ox
+V
Si
V
FB
=
φ
MS

1
C
ox
[
Q
f
+
⌡
⌠
0
x
ox
x
ρ
ox
(x)
x
ox
dx
]
MOSFET
IV (nchannel):
I
DS
=
μ
n
W
L
C
ox
[ (V
G
 V
T
) V
DS
 V
DS
2
/2 ]
(below saturation)
I
Dsat
=
μ
n
W
L
C
ox
[(V
G
V
T
)
2
/2] (above saturation)
Grading: Whenever possible, use
sketches
to support your explanation.
Show correct units and algebraic sign for numerical answers.
No partial credit for numerical answers orders of magnitude off.
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