Defects_tutorial

Defects_tutorial - Professor N Cheung U.C Berkeley Defects...

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Professor N Cheung, U.C. Berkeley Defects Tutorial EE143 F2010 1 Defects and “Damage” Point Defects, Point Defects clusters. Line Defects, Extended Defects Ion Implantation Defects Amorphization Secondary Defects (end-of-range loops) Effect of defects on -Electrical resistivity -PN junction leakage current -Diffusion -Mechanical stress
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Professor N Cheung, U.C. Berkeley Defects Tutorial EE143 F2010 2 Simple Point Defects (Elemental crystal)
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Professor N Cheung, U.C. Berkeley Defects Tutorial EE143 F2010 3 More complicated Point Defects (AB compound)
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Professor N Cheung, U.C. Berkeley Defects Tutorial EE143 F2010 4 2) Diffusivity of Si interstitials and Si vacancies >> diffusivity of dopants 1) Thermal-equilibrium values of Si neutral interstitials and vacancies at diffusion temperatures << doping concentration of interest (10 15 –10 20 /cm 3 ) Si Native Point Defects At 1000 o C, C Io * ~ 10 12 /cm3 C Vo * ~ 10 13 /cm3 For reference only Si vacancy Si interstitial
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Professor N Cheung, U.C. Berkeley Defects Tutorial EE143 F2010 5 Neutral and Charged Point Defects
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Professor N Cheung, U.C. Berkeley Defects Tutorial EE143 F2010 6 A dislocation line can: •Create mechanical stress •Getter Impurities Line Defects ( dislocations)
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Professor N Cheung, U.C. Berkeley Defects Tutorial EE143 F2010 7 Movement of Dislocation can create slippage
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Professor N Cheung, U.C. Berkeley Defects Tutorial EE143 F2010 8 Misfit Dislocation of Epitxial layers
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Professor N Cheung, U.C. Berkeley Defects Tutorial EE143 F2010 9 Two-Dimensional Defects Grain Boundary Twins Boundary
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Professor N Cheung, U.C. Berkeley Defects Tutorial EE143 F2010 10 Polycrystalline Solids Polymers Silicate Glass Amorphous Solids
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Professor N Cheung, U.C. Berkeley Defects Tutorial EE143 F2010 11 Implantation “Damage” Substrate Interstitials and Vacancies are created by momentum transfer collision process
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Defects_tutorial - Professor N Cheung U.C Berkeley Defects...

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