Lec_03 - Professor N Cheung, U.C. Berkeley Lecture 4 EE143...

Info iconThis preview shows pages 1–5. Sign up to view the full content.

View Full Document Right Arrow Icon
Professor N Cheung, U.C. Berkeley Lecture 4 EE143 F2010 1 Electrical Contacts to Si (1) Schottky (rectifying) contacts: I V conducting non-conducting SiO 2 Al n-type Si SiO 2 V depletion region Majority carriers cannot move easily from the metal into the n-Si, due to a large potential barrier. For the same metal, this potential barrier is smaller for contacts to p-type Si. Al p-type Si V SiO 2 SiO 2 V moderately conducting I
Background image of page 1

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Professor N Cheung, U.C. Berkeley Lecture 4 EE143 F2010 2 (2) Tunneling “ohmic” contacts: SiO 2 Al n-type Si SiO 2 V n+ N D 10 20 cm -3 The depth of the depletion region ( x d ) decreases with increasing dopant concentration. For very high doping, x d is small enough (<10nm) to allow quantum tunneling of carriers. N A 10 20 cm -3 SiO 2 Al p-type Si SiO 2 p+ V I V
Background image of page 2
Professor N Cheung, U.C. Berkeley Lecture 4 EE143 F2010 3 n-channel MOSFET *sequence of additive and subtractive steps with lateral patterning Si wafer starting substrate *planar processing steps + monolithic integration of multiple devices = e.g. oxidation deposition ion implantation e.g. etching e.g. lithography Monolithic Integration: Planar Technology
Background image of page 3

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Professor N Cheung, U.C. Berkeley Lecture 4 EE143 F2010 4
Background image of page 4
Image of page 5
This is the end of the preview. Sign up to access the rest of the document.

This note was uploaded on 03/03/2012 for the course EECS 142 taught by Professor Ee142 during the Spring '04 term at University of California, Berkeley.

Page1 / 13

Lec_03 - Professor N Cheung, U.C. Berkeley Lecture 4 EE143...

This preview shows document pages 1 - 5. Sign up to view the full document.

View Full Document Right Arrow Icon
Ask a homework question - tutors are online