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Lec_06

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Professor N. Cheung, U.C. Berkeley Lecture 6 EE143 F2010 1 Thermal Oxidation of Si General Properties of SiO 2 Applications of thermal SiO 2 Deal-Grove Model of Oxidation Thermal SiO 2 is amorphous . Weight Density = 2.20 gm/cm 3 Molecular Density = 2.3E22 molecules/cm 3 Crystalline SiO 2 [Quartz] = 2.65 gm/cm 3 SiO2 <Si>
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Professor N. Cheung, U.C. Berkeley Lecture 6 EE143 F2010 2 Thermal SiO 2 Properties (1) Excellent Electrical Insulator Resistivity > 1E20 ohm-cm Energy Gap ~ 9 eV (2) High Breakdown Electric Field > 10MV/cm (3) Stable and Reproducible Si/SiO 2 Interface (4) Conformal oxide growth on exposed Si surface SiO2 Thermal Oxidation Si Si
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Professor N. Cheung, U.C. Berkeley Lecture 6 EE143 F2010 3 (5) SiO 2 is a good diffusion mask for common dopants D D sio si 2  e.g. B, P, As, Sb. (6) Very good etching selectivity between Si and SiO 2 . SiO 2 Si SiO 2 Si HF dip *exceptions are Ga (a p-type dopant) and some metals, e.g. Cu, Au Thermal SiO 2 Properties – cont. Si
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Professor N. Cheung, U.C. Berkeley Lecture 6 EE143 F2010 4 Steam generation for wet oxidation Thermal Oxidation Equipment
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Professor N. Cheung, U.C. Berkeley Lecture 6 EE143 F2010 5 Volume change due to thermal oxidation Molecular Density of SiO2 = 2.3E22 molecules / cm 3 Atomic Density of Si = 5.0E22 atoms / cm 3 Volume of SiO2 = 2.16 Volume of Si consumed Mechanical stress will be generated with confined oxidation
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Professor N. Cheung, U.C. Berkeley Lecture 6 EE143 F2010 6 1 m Si oxidized 2.17 m SiO 2 One-dimensional planar oxide growth Suggested exercise: Si 1 m diameter Si sphere SiO2 1.3 m diameter SiO 2 sphere completely oxidized Si Si SiO 2 1 m 2.17 m Roughly half of oxide grown is under original Si surface
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Professor N. Cheung, U.C. Berkeley Lecture 6 EE143 F2010 7 Thickness of Si consumed (planar oxidation) si ox ox si N N X X ox ox X cm atoms cm
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