Lec_15 - Professor N Cheung, U.C. Berkeley Lecture 15 EE143...

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Professor N Cheung, U.C. Berkeley Lecture 15 EE143 F2010 1 Reactive Ion Etching (RIE) ~ plasma wafers RF 13.56 MHz Parallel-Plate Reactor Plasma generates (1) Ions (2) Activated neutrals Enhance chemical reaction Sputtering
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Professor N Cheung, U.C. Berkeley Lecture 15 EE143 F2010 2
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Professor N Cheung, U.C. Berkeley Lecture 15 EE143 F2010 3 Remote Plasma Reactors Plasma Sources (1) Transformer Coupled Plasma (TCP) (2) Electron Cyclotron Resonance (ECR) -bias pump e.g. quartz coils plasma wafers Pressure 1mTorr 10mTorr bias~ 1kV
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Professor N Cheung, U.C. Berkeley Lecture 15 EE143 F2010 Processes Occurring in Plasma Etching
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Professor N Cheung, U.C. Berkeley Lecture 15 EE143 F2010 5 • Synergism of ion bombardment AND chemical reaction give the high RIE rates.
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Professor N Cheung, U.C. Berkeley Lecture 15 EE143 F2010 6 REMOVAL of surface film and DEPOSITION of plasma reaction products can occur simultaneously
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Professor N Cheung, U.C. Berkeley Lecture 15 EE143 F2010 7 RIE Etching Sequence gas flow 1 2 3 5 4 X diffusion of reactant diffusion of by product desorption chemical reaction gaseous by products absorption Substrate
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Professor N Cheung, U.C. Berkeley Lecture 15 EE143 F2010 8 Volatility of Etching Product * Higher vapor pressure higher volatility ) ( . . 4 . . 4 * pressure vapor low CuCl Cl Cu g e SiF F Si g e mask Al-Cu Metal (high vapor pressure) Example Difficult to RIE Al-Cu alloy with high Cu content Do not want CuCl residues
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Professor N Cheung, U.C. Berkeley Lecture 15 EE143 F2010 9 kT H v e P P 0 1/T P 1500 o C AlCl 3 CuCl [Al-Cu alloy] Cl 2 as etching gas.
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This note was uploaded on 03/03/2012 for the course EECS 142 taught by Professor Ee142 during the Spring '04 term at University of California, Berkeley.

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Lec_15 - Professor N Cheung, U.C. Berkeley Lecture 15 EE143...

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