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Lec_22 - EE143 F2010 Lecture 22 Electrical Characteristics...

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Professor N Cheung, U.C. Berkeley Lecture 22 EE143 F2010 1 Electrical Characteristics of MOS Devices The MOS Capacitor Voltage components Accumulation, Depletion, Inversion Modes Effect of channel bias and substrate bias Effect of gate oxide charges Threshold-voltage adjustment by implantation Capacitance vs. voltage characteristics MOS Field-Effect Transistor I-V characteristics Parameter extraction “metal” oxide semiconductor V G + x ox
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