Chapter 5FET2 - S J T U J. C h e n 1 3/2/12 Chapter 5...

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Unformatted text preview: S J T U J. C h e n 1 3/2/12 Chapter 5 Field-Effect Transistors (FETs) 3/2/12 SJTU J. Chen 2 The MOSFET with voltages applied and the directions of current flow indicated. The relative levels of the terminal voltages of the enhancement- type PMOS transistor for operation in the triode region and in the saturation region. Characteristics of p channel device 3/2/12 SJTU J. Chen 3 Large-signal equivalent circuit model of the p-channel MOSFET in saturation, incorporating the output resistance ro . The output resistance models the linear dependence of iD on vDS Characteristics of p channel device 3/2/12 SJTU J. Chen 4 In discrete circuit usually there is no body effect du e to the connection between body and source term inal. In IC circuit the substrate is connected to the most negative power supply for NMOS circuit in order to maintain the pn junction reversed biased. The body effect---the body voltage can control iD Widen the depletion layer Reduce the channel depth Threshold voltage is increased Drain current is reduced The body effect can cause the performance degra The body effect 3/2/12 SJTU J. Chen 5 Temperature effects and breakdown regi on Drain current will decrease when the temp erature increase. Breakdown Avalanche breakdown Punched-through Gate oxide breakdown 2 2 1 ) ' t GS n D V v L W k i- = 3/2/12 SJTU J. Chen 6 MOS ? ? ? ? ? MOS ? ?- ? ? ? ? ? ? ? ? , ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? R GS(DC) ? ? , ? ? ? ? ? ? ? ? , ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? , ? ? ? ? ? ? ? ? ? , ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? , ? ? ?- ? ? ? ? ? ? ? ? ? , ? ? ? ? ? ? ? 3/2/12 SJTU J. Chen 7 MOS ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ?...
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Chapter 5FET2 - S J T U J. C h e n 1 3/2/12 Chapter 5...

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