ECE 231 -13 - ECE-231 Circuits and Systems I Fall 2011...

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ECE-231 Circuits and Systems I Fall 2011 Session 13 Dr. Stewart Personick Office: ECEC Room 331 [email protected]
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Semiconductor Diode “reverse-biased” + + + + + + + + + + + + + + e - - - - - - - - - - - - - - h N-type (mobile electrons) P-type (mobile holes) + electrons electrons -
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Semiconductor Diode “reverse-biased” + + + + + + + + + + + + + + e - - - - - - - - - - - - - - h N-type (mobile electrons) P-type (mobile holes) electrons electrons Holes and electrons move away from the junction, leaving behind immobile charged atoms on either side of the junction + -
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Semiconductor Diode “forward-biased” e e electron s h h N-type (mobile electrons) P-type (mobile holes) Electrons in the N-type material move across the junction , and combine with holes in the P-type material. electrons + -
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Semiconductor Diode “forward-biased” e e electron s h h N-type (mobile electrons) P-type (mobile holes) Holes in the P-type material move across the junction , and combine with electrons in the N-type material electrons + -
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Diode Application: half wave rectifier (DC power supply) ~ v(t) = 170 sin (377t) 1N4007 C= 100 μ F 154.5VDC +/- 11.2 volts (peak) of residual ripple
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