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EEL6323-S09-EXAM-R2 - Spring 2009 EEL 6323 Midterm...

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Spring 2009 EEL 6323 Midterm Exam (Closed book, closed notes, 60 Minutes) Name: _____________________________ UFID: _____________________________ Problem 1 30 pts. Problem 2 30 pts. Problem 3 40 pts. Total : Honor Code: We, the members of the University of Florida community, pledge to hold ourselves and our peers to the highest standards of honesty and integrity. __________________________ Signature Note: Please show work. Answers without analysis will not receive credit.
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PROBLEM 1 – short answer questions (30pts) 1.1 Determine V OUT for each of the circuits below in terms of V DD , V TN and V TP , where V DD is the supply voltage, V TN and V TP are the nMOS and pMOS threshold voltage drops, respectively. Neglect the body effect in each case and assume V DD is at least 5 times larger than the threshold voltages. a. V OUT = b. V OUT = c. V OUT = d V OUT = V DD V DD V DD V OUT V OUT V OUT V OUT 1.2.Which of the following transistors, M A or M B , will exhibit a higher threshold voltage? Justify your answer. M A M B 1.3.Estimate the gate oxide thickness for a transistor in 250nm and 180nm CMOS technologies.
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