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Unformatted text preview: 1 Lecture 8: Circuit Simulations • Circuit Characterization (Brief) • Reading: Ch. 5 IV curves: Basic Shapes • IDS vs VDS (two regions) – Linear (Low V DS ) • Effective Resistance – Saturated (High V DS ) • Current, g m , g ds • IDS vs VGS – Linear IDS (above threshold) – Log (IDS) (below threshold) 2 SPICE Level 1 Model • Shichman-Hodges Model (Schichman68) – Similar to Shockley model, but with channel length modulation and body effect saturation V V V V V V LAMBDA L W KP linear V V V V V V V V LAMBDA L W KP cutoff V V I t gs ds t gs ds eff eff t gs ds ds ds t gs ds eff eff t gs ds 2 1 2 2 1 SPICE Level 1 Model • SPICE Level 1 Model • SPICE Level 2 and 3 – Includes velocity saturation, mobility degradation, subthreshold conduction, drain induced barrier lowering • BSIM Models – Berkeley Short-Channel IGFET Model (BSIM) – IGFET – Insulated Gate Field Effect Transistor (i.e. MOSFET) – BSIM 3.v3 = SPICE level 49 • More then 100 parameters and device equations!• More then 100 parameters and device equations!...
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This note was uploaded on 03/02/2012 for the course ESI 6323 taught by Professor Guan during the Spring '09 term at University of Florida.
- Spring '09