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Unformatted text preview: 1 Lecture 8: Circuit Simulations Circuit Characterization (Brief) Reading: Ch. 5 IV curves: Basic Shapes IDS vs VDS (two regions) Linear (Low V DS ) Effective Resistance Saturated (High V DS ) Current, g m , g ds IDS vs VGS Linear IDS (above threshold) Log (IDS) (below threshold) 2 SPICE Level 1 Model Shichman-Hodges Model (Schichman68) Similar to Shockley model, but with channel length modulation and body effect saturation V V V V V V LAMBDA L W KP linear V V V V V V V V LAMBDA L W KP cutoff V V I t gs ds t gs ds eff eff t gs ds ds ds t gs ds eff eff t gs ds 2 1 2 2 1 SPICE Level 1 Model SPICE Level 1 Model SPICE Level 2 and 3 Includes velocity saturation, mobility degradation, subthreshold conduction, drain induced barrier lowering BSIM Models Berkeley Short-Channel IGFET Model (BSIM) IGFET Insulated Gate Field Effect Transistor (i.e. MOSFET) BSIM 3.v3 = SPICE level 49 More then 100 parameters and device equations! More then 100 parameters and device equations!...
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- Spring '09