Lec11.643 - EECE 643 Computer-Aided Circuit Engineering -...

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1 EECE 643 Computer-Aided Circuit Engineering - Bipolar Junction Transistors - For the NPN BJT transistor as shown, plot the output characteristics (I C versus V CE ) if V CE is varied from 0 to 10 V in steps of 0.02 V and I B is varied from 0 to 1 mA in steps of 200 μ A. Print the details of the small-signal parameters at the operating point for I B = 1 mA and V CE = 12 V. NPN BJT CHARACTERISTICS Parameters of BJTS Model Name Model Parameter Default IS p-n Saturation current 1E-16 Amps BF Ideal maximum forward beta 100 TF Ideal forward transit time 0 NS CJE Base-emitter zero-bias p-n capacitance 0 PF CJC Base-collector zero-bias p-n capacitance 0 PF VAR(VA) Forward early voltage V
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2 TR Ideal reverse transit time 0 NS BR Ideal maximum reverse beta 1 RB Zero-bias base resistance 0 ohm RC Collector ohmic resistance 0 ohm RE Emitter ohmic resistance 0 ohm VJE Base-emitter built-in potential 0.75 V NF Forward current emission coefficient 1 NE Base-emitter leakage emission coefficient 1.5 NR Reverse current emission coefficient 1 VAR(VB) Reverse early voltage V NC Base-collector leakage emission coefficient 2 RBM Minimum base resistance 0 MJE(ME) Base-emitter p-n grading factor 0.33 VJC Base-collector built-in potential .75 V MJC(MC) Base-collector p-n grading factor 0.33 CJS(CCS) Collector-substrate zero-bias p-n capacitance 0 PF VJS Collector-substrate built-in potential 0.75 V MJS(MS) Collector-substrate p-n grading factor 0
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3 - A two-stage BJT transistor amplifier is given below.
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This note was uploaded on 03/11/2012 for the course EECE 643 taught by Professor Staff during the Spring '12 term at CSU Chico.

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Lec11.643 - EECE 643 Computer-Aided Circuit Engineering -...

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