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Chapter_1 - Circuit Analysis and Design Donald A Neamen...

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Neamen  Microelectronics, 4e Chapter 1-1     McGraw-Hill Microelectronics  Circuit Analysis and Design Donald A. Neamen Chapter 1 Semiconductor Materials and Devices
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Neamen  Microelectronics, 4e Chapter 1-2     McGraw-Hill Assignments Read Chapter 1 HW#1 due on Friday 2/10/2012: Chapter1: 1, 3, 5, 7,  9, 11, 13, 15, 17, 19, 21, 23, 25, 27, 29, 31, 33, 35,  39, 41, 43, 45, 47, 49, 51, 55, 61
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Neamen  Microelectronics, 4e Chapter 1-3     McGraw-Hill In this chapter, we will: Gain a basic understanding of semiconductor material properties Two types of charged carriers that exist in a semiconductor Two mechanisms that generate currents in a semiconductor Determine the properties of a pn junction   Ideal current–voltage characteristics of a pn junction diode Examine dc analysis techniques for diode circuits using various  models to describe the nonlinear diode characteristics Develop an equivalent circuit for a diode that is used when a small,  time-varying signal is applied to a diode circuit Gain an understanding of the properties and characteristics of a  few specialized diodes Design a simple electronic thermometer using the temperature  characteristics of a diode 
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Neamen  Microelectronics, 4e Chapter 1-4     McGraw-Hill Intrinsic Semiconductors Ideally 100% pure material Elemental semiconductors Silicon (Si) Most common semiconductor used today Germanium (Ge) First semiconductor used in p-n diodes Compound semiconductors Gallium Arsenide (GaAs)
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Neamen  Microelectronics, 4e Chapter 1-5     McGraw-Hill Silicon (Si) Covalent bonding of one Si atom with four other Si atoms to form tetrahedral unit cell. Valence electrons available at edge of crystal to bond to additional Si atoms.
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Neamen  Microelectronics, 4e Chapter 1-6     McGraw-Hill Effect of Temperature At 0K, no bonds are broken. Si is an insulator. As temperature increases, a bond can break, releasing a valence electron and leaving a broken bond (hole). Current can flow.
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Neamen  Microelectronics, 4e Chapter 1-7     McGraw-Hill Energy Band  Diagram E v  – Maximum energy of a valence electron or hole E c  – Minimum energy of a free electron E g  – Energy required to break the covalent bond
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Neamen  Microelectronics, 4e Chapter 1-8     McGraw-Hill Movement of Holes A valence electron in a nearby bond can move to fill the broken bond, making it appear as if the ‘hole’ shifted locations.
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Neamen  Microelectronics, 4e Chapter 1-9     McGraw-Hill Intrinsic Carrier Concentration kT E i g e BT n 2 2 3 - = B – coefficient related to specific semiconductor T – temperature in Kelvin E g – semiconductor bandgap energy k – Boltzmann’s constant 3 10 10 5 . 1 ) 300 , ( - = cm x K Si n i
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Neamen  Microelectronics, 4e Chapter 1-10     McGraw-Hill
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