Lab5.315

# Lab5.315 - EECE-315 Prelab 5 1 Assuming = 100 design a bias...

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EECE-315 Prelab 5 1. Assuming β = 100, design a bias circuit to give a nominal I CQ = 2 mA with a supply voltage of 12 V. Assume the BJT is biased in its active region and the emitter resistance is 2.2 k Ω . Use 5% tolerance resistors. 2. Calculate the largest value of collector resistance, R C,max , that will allow the transistor to remain in active region. Assume V CE (min) = 0.4 V. R2 RE 2.2k RC R1 Q1 2N3904 12 V 0 0

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E ECE-315 Lab 5 1. Let R C = 0 Ω (short circuit). Build the circuit that you designed in the prelab. Measure I EQ and V CEQ . Correlate your measurement (I EQ I CQ ) to the theoretically I CQ given in the prelab. 2. Use a Tektronix curve tracer to display and plot the i-v family curves of your 2N3904 transistor. Scale the curves to display from the origin to the maximum v CE ( I C = 0) and the maximum i C (V CE = 0). 3. From the i-v curves, determine the values of dc β and ac β . Here is the procedure to determine them: (a) Draw the dc load line of your circuit on the plotted i-v curves. (b) Mark the Q-point (I
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Lab5.315 - EECE-315 Prelab 5 1 Assuming = 100 design a bias...

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