IRF840_datasheet

IRF840_datasheet - IRF840 D ata Sheet January 2002 8A,...

Info iconThis preview shows pages 1–3. Sign up to view the full content.

View Full Document Right Arrow Icon
©2002 Fairchild Semiconductor Corporation IRF840 Rev. B IRF840 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power feld e±±ect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specifed level o± energy in the breakdown avalanche mode o± operation. All o± these power MOSFETs are designed ±or applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers ±or high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly ±rom integrated circuits. Formerly developmental type TA17425. Features • 8A, 500V •r DS(ON) = 0.850 • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Trans±er Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines ±or Soldering Sur±ace Mount Components to PC Boards” Symbol Packaging JEDEC TO-220AB TOP VIEW Ordering Information PART NUMBER PACKAGE BRAND IRF840 TO-220AB IRF840 NOTE: When ordering, include the entire part number. G D S SOURCE DRAIN GATE DRAIN (FLANGE) Data Sheet January 2002
Background image of page 1

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
IRF840 Rev. B Absolute Maximum Ratings T C = 25 o C, Unless Otherwise Specifed IRF840 UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V DS 500 V Drain to Gate Voltage (R GS = 20k Ω) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V DGR 500 V Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I D 8.0 A T C = 100 o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I D 5.1 A Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I DM 32 A Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V GS ± 20 V Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P D 125 W Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0 W/ o C Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E AS 510 mJ Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T J , T STG -55 to 150 o C Maximum Temperature ±or Soldering Leads at 0.063in (1.6mm) ±rom Case ±or 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T L Package Body ±or 10s, See Techbrie± 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T pkg 300 260 o C o C CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this speciFcation is not implied. NOTE: 1. T J = 25 o C to 125 o C. Electrical Specifcations T C = 25 o C, Unless Otherwise Specifed PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BV DSS V GS = 0V, I D = 250 µ A (Figure 10) 500 - - V Gate to Threshold Voltage V GS(TH) V GS = V DS , I D = 250 µ A 2.0 - 4.0 V Zero-Gate Voltage Drain Current I DSS V DS = Rated BV DSS , V GS = 0V - - 25 µ A V DS = 0.8 x Rated BV DSS , V GS = 0V, T J = 125 o C - - 250 µ A On-State Drain Current (Note 2) I D(ON) V DS > I D(ON) x r DS(ON)MAX , V GS = 10V 8.0 - - A Gate to Source Leakage Current I GSS V GS = ± 20V - - ± 100 nA Drain to Source On Resistance (Note 2) r DS(ON) V GS = 10V, I D = 4.4A (Figures 8, 9) - 0.8 0.85 Forward Transconductance (Note 2) g ±s V DS 50V, I D = 4.4A (Figure 12) 4.9 7.4 - S Turn-On Delay Time t D(ON) V DD = 250V, I D 8A, R G = 9.1 , R L = 30
Background image of page 2
Image of page 3
This is the end of the preview. Sign up to access the rest of the document.

Page1 / 8

IRF840_datasheet - IRF840 D ata Sheet January 2002 8A,...

This preview shows document pages 1 - 3. Sign up to view the full document.

View Full Document Right Arrow Icon
Ask a homework question - tutors are online