Lect2UP040_(100324)

Lect2UP040_(100324) - Lecture 040 UDSM and BiCMOS...

Info icon This preview shows pages 1–5. Sign up to view the full content.

View Full Document Right Arrow Icon
Lecture 040 – UDSM and BiCMOS Technologies (3/24/10) Page 040-1 CMOS Analog Circuit Design © P.E. Allen - 2010 LECTURE 040 - ULTRA-DEEP SUBMICRON AND BiCMOS TECHNOLOGIES LECTURE ORGANIZATION Outline • Ultra-deep submicron CMOS technology - Features - Advantages - Problems • BiCMOS technology process flow - CMOS is typical submicron (0.5 μ m) • Summary CMOS Analog Circuit Design, 2 nd Edition Reference New material Lecture 040 – UDSM and BiCMOS Technologies (3/24/10) Page 040-2 CMOS Analog Circuit Design © P.E. Allen - 2010 ULTRA-DEEP SUBMICRON (UDSM) CMOS TECHNOLOGY USDM Technology L min ± 0.1 microns • Minimum feature size less than 100 nanometers • Today’s state of the art: - 65 nm drawn length - 15 nm lateral diffusion (35 nm gate length) - 1.2 nm transistor gate oxide - 8 layers of copper interconnect Specialized processing is used to increase drive capability and maintain low off currents
Image of page 1

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full Document Right Arrow Icon
Lecture 040 – UDSM and BiCMOS Technologies (3/24/10) Page 040-3 CMOS Analog Circuit Design © P.E. Allen - 2010 65 Nanometer CMOS Technology TEM cross-section of a 35 nm NMOS and PMOS transistors. NMOS: PMOS: These transistors utilize enhanced channel strains to increase drive capability and to reduce off currents. P. Bai, et. Al., “A 65nm Lobic Technology Featuring 35nm Gate Lengths, Enhanced Channel Strain, 8 Cu Interconnect Layers, Low-k ILD and 0.57 μ m 2 SRAM Cell, IEEE Inter. Electron Device Meeting , Dec. 12-15, 2005. NMOS 220 nm pitch Lecture 040 – UDSM and BiCMOS Technologies (3/24/10) Page 040-4 CMOS Analog Circuit Design © P.E. Allen - 2010 UDSM Metal and Interconnects Physical aspects: Layer Pitch (nm) Thickness (nm) Aspect Ratio Isolation 220 230 - Polysilicon 220 90 - Contacted Gate Pitch 220 - - Metal 1 210 170 1.6 Metal 2 210 190 1.8 Metal 3 220 200 1.8 Metal 4 280 250 1.8 Metal 5 330 300 1.8 Metal 6 480 430 1.8 Metal 7 720 650 1.8 Metal 8 1080 975 1.8
Image of page 2
Lecture 040 – UDSM and BiCMOS Technologies (3/24/10) Page 040-5 CMOS Analog Circuit Design © P.E. Allen - 2010 What are the Advantages of UDSM CMOS Technology? Digital Viewpoint: • Improved I on / I off 70 Mbit SRAM chip: • Reduced gate capacitance • Higher drive current capability • Reduced interconnect density • Reduction of active power Analog Viewpoint: • More levels of metal • Higher f T • Higher capacitance density • Reduced junction capacitance per g m Lecture 040 – UDSM and BiCMOS Technologies (3/24/10) Page 040-6 CMOS Analog Circuit Design © P.E. Allen - 2010 What are the Disadvantages of UDSM CMOS Technology (for Analog)? • Reduction in power supply resulting in reduced headroom • Gate leakage currents • Reduced small-signal intrinsic gains • Increased nonlinearity (IIP3) • Noise and matching?? Intrinsic gain and IP3 as a function of the gate overdrive for decreasing V DS : Anne-Johan Annema, et. Al., “Analog Circuits in Ultra-Deep-Submicron CMOS,” IEEE J. of Solid-State Circuits , Vol. 40, No. 1, Jan. 2005, pp. 132- 143.
Image of page 3

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full Document Right Arrow Icon
Lecture 040 – UDSM and BiCMOS Technologies (3/24/10) Page 040-7 CMOS Analog Circuit Design © P.E. Allen - 2010 What is the Gate Leakage Problem?
Image of page 4
Image of page 5
This is the end of the preview. Sign up to access the rest of the document.

{[ snackBarMessage ]}

What students are saying

  • Left Quote Icon

    As a current student on this bumpy collegiate pathway, I stumbled upon Course Hero, where I can find study resources for nearly all my courses, get online help from tutors 24/7, and even share my old projects, papers, and lecture notes with other students.

    Student Picture

    Kiran Temple University Fox School of Business ‘17, Course Hero Intern

  • Left Quote Icon

    I cannot even describe how much Course Hero helped me this summer. It’s truly become something I can always rely on and help me. In the end, I was not only able to survive summer classes, but I was able to thrive thanks to Course Hero.

    Student Picture

    Dana University of Pennsylvania ‘17, Course Hero Intern

  • Left Quote Icon

    The ability to access any university’s resources through Course Hero proved invaluable in my case. I was behind on Tulane coursework and actually used UCLA’s materials to help me move forward and get everything together on time.

    Student Picture

    Jill Tulane University ‘16, Course Hero Intern