CH2 WEBMatSE361_2Silicon_SubstrateNOTES

CH2 WEBMatSE361_2Silicon_SubstrateNOTES - MatSE 361...

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1 MatSE 361 OUTLINE: 2. Si Substrate Preparation OUTLINE MatSE 361 Chapter 0 Syllabus, Intro 2. Si Substrate Preparation Overall Process Wafer production Impurities in as Grown Si Denuding Process: Process Flow Denuding Process: Diffusion Review (Ch. 7 Mayer) Denuding Process: Quantitative SOI (Si on Insulator)
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2 MatSE 361 OUTLINE: 2. Si Substrate Preparation Overall Process Wafer production MatSE 361 Chapter 0 Syllabus, Intro 2. Si Substrate Preparation Overall Process Wafer production Growth, Cut, Polish, Etch Ingot Production: Recystallization from melt: Seeding Impurities in as Grown Si Denuding Process: Process Flow Denuding Process: Diffusion Review (Ch. 7 Mayer) Denuding Process: Quantitative SOI (Si on Insulator)
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3 Overall Process: Growth, Cut, Polish, Etch
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4 Ingots Wafers Growth From Melt: Seed MatSE 361 Chapter A Intro Mayer Making a single crystal boule of Si: Melt refined “powder” of Si (1414 ° C) Dip and pull small Si crystal seed Pull slowly - avoid defects (dislocations) Thermal gradient Too high defects Too slow production slow $ Impurities (ppm) Carbon - something has to hold the liquid Si Metals, oxygen Overall crystallinity: Excellent ! However, not good enough for many applications.
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5 MatSE 361 OUTLINE: 2. Si Substrate Preparation Impurities in as Grown Si MatSE 361 Chapter 0 Syllabus, Intro 2. Si Substrate Preparation Overall Process Wafer production Impurities in as Grown Si Impurities in as grown CZ-Si, Solubility (Sze/Chu/Wolf) External Gettering Impurities Denuding Process: Process Flow Denuding Process: Diffusion Review (Ch. 7 Mayer) Denuding Process: Quantitative SOI (Si on Insulator)
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6 Impurities in as grown CZ-Si, Solubility (Sze/Chu/Wolf) MatSE 361 Chapter A Intro Mayer As grown C-Z has many chemical impurities and some crystal defects. Non dopant metals impurities (even small amounts) are especially “bad” for eventual device performance. Also, there is a large concentration of oxygen (10 18 cm -3 ) in the as grown Si boule which is much larger than the solubility limits at RT. How do we get rid of these metals and reduce the oxygen concentration? We “HEAT” the wafers in a special heating sequence and let nature clean-up ” the wafer. Dopants (B, As, P) Oxygen Solubility limits of some impurities in Si.
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7 External Gettering Processes See Mayer 176-177
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8 MatSE 361 OUTLINE: 2. Si Substrate Preparation Denuding Process: Process Flow MatSE 361 Chapter 0 Syllabus, Intro 2. Si Substrate Preparation Overall Process Wafer production Impurities in as Grown Si Denuding Process: Process Flow Internal Impurity Gettering: Denuding Process I: Oxygen Out-diffusion - Temperature Cycle Denuding Process II: Oxygen: Nucleation and Precipitation Denuding Process III: Metal Precipitation Denuding Process: Diffusion Review (Ch. 7 Mayer) Denuding Process: Quantitative SOI (Si on Insulator)
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9 Internal Gettering: Denude Process (Wolf-I
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This note was uploaded on 03/21/2012 for the course MSE 461 taught by Professor Rockett during the Fall '08 term at University of Illinois, Urbana Champaign.

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CH2 WEBMatSE361_2Silicon_SubstrateNOTES - MatSE 361...

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