CH3 WEBMatSE361_3IonsNOTES - MatSE 361 OUTLINE 3 Ion...

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1 MatSE 361 OUTLINE: 3. Ion Implantation OUTLINE MatSE 361 Chapter 0 Syllabus, Intro 3. Ion Implantation Introduction Machine Simulation Energy Loss Mechanisms Ion-Nucleus Interaction SOI: Hydrogen in Si RBS and Channeling
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2 MatSE 361 OUTLINE: 3. Ion Implantation Introduction MatSE 361 Chapter 0 Syllabus, Intro 3. Ion Implantation Introduction Uses in Microelectronic: Dopants, SOI, Silicide:(Amorphization, Ion beam mixing) SOI: Overall Process Wafer Specification Physical Nature of Highly Doped (~10 22 /cm 3 ) Oxygen, hydrogen Buried Layers Dopants for Low Contact Resistance (Rc) at Source/Drain : Rc vs. Dopant Concentration (Sze/1981-pg.305) Ohmic Contacts: Metal/Si Schottky Barrier: Tunneling, Thermionic Emission Ion Beams in Microelectronics: Focused Ion Beams (FIB) Ion Implantation - Basic Idea Energy-Time domains Machine Simulation Energy Loss Mechanisms Ion-Nucleus Interaction: SOI: Hydrogen in Si RBS and Channeling RTA
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3 INTRODUCTION : Ion Implantation [10.2] MatSE 361 Chapter G Ion Implantation Doping Impurities >10 20 /cm 3 Buried Layer - 10 22 /cm 3 TiSi2 C49-C54 Transformation - PAM Pre-Amorphization-Metallization Crystallization - amorphous crystal Amorphizing - crystal amorphous Ion Beam Mixing metastable phases Surface modification toughness N 2 implant hip, …artificial joints Interface breakup SOI - Oxygen, Hydrogen Buried metal transistors Use as a Very Fast Heater Mayer, Averback, Greene, Poate, Chu, Ziegler,…
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4 SOI Wafers [10.2a] MatSE 361 Chapter A Intro Mayer Si Si SiO 2 SOI ~ Silicon on Insulator Si Si H Unibond SEE page 50-51 SOI book Colinge
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5 SOI Wafers Specifications [10.2b] MatSE 361 Chapter A Intro Mayer
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6 SOI Wafers: Nature of the H Implant [10.2c] MatSE 361 Chapter A Intro Mayer SOI ~ Silicon on Insulator Si Si H H + How can we get so much “H” inside the wafer? How thick? What is its nature: Gas, Solid(Hydride)? What is the nature of the Si above and below the “H”: crystalline? How do keep the crystallinity ”perfect” with all of this damage? Is there any limit to how much material we can implant? ~200++nm
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7 Dopants for Source/Drain MatSE 361 Chapter G Ion Implantation We want the highest maximum doping level to reduce the contact resistance. Ion implant high number of dopant atoms * Easy - run the ion implanter longer time - larger dosage Show-stopper Issues * Activating dopants - substitution lattice sites single/noninteracting dopants (pairs) solubility limits (what governs maximum levels) keeping dopants activated during cooling (N e -Ea/kT ) * Reducing/eliminating of ion damage point defects, dislocation loops * Shallow profile * Minimize lateral diffusion Gate d L d T
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8 R c Contact Resistance vs. Doping Source/Drain MatSE 361 Chapter Ion Implantation Schottky Barrier “Ohmic” Contact I V R c (V=0) = dV/dI
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9 Focussed Ion Beam: MRL Manufacturer: FEI , Hillsboro, Oregon ----> INTEL Specifications: FEI Dual Beam System 620 Ion Beam: Ion Source: Gallium LMIS Energy: 30 keV Current: 6 pA - 7 nA Resolution: 16 nm Electron Beam: Electron Source: Field Emitter Energy: 1 - 30 keV Resolution: 5 nm Wafer Stage: 150 mm Specifications: FEI 800 xP
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CH3 WEBMatSE361_3IonsNOTES - MatSE 361 OUTLINE 3 Ion...

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