MSE461_09_07_2011_Glauber_Resistive Memory

MSE461_09_07_2011_Glauber_Resistive Memory - A fast...

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A fast, high-endurance and scalable non- volatile memory device made from asymmetric Ta2O5-x / TaO2-x bilayer structures John Glaub young-Jae Lee, Chang Bum Lee, Dongsoo Lee, Seung Ryul Lee, Man Chang, Ji Hyun Hur oung-Bae Kim, Chang-Jung Kim, David H. Seo, Sunae Seo, U-In Chung, In-Kyeong Yoo nd Kinam Kim
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Abstract Numerous candidates attempting to replace Si-based flash memory have failed for a variety of reasons over the years. Oxide- based resistance memory and the related memristor have succeeded in surpassing the specifications for a number of device requirements. However, a material or device structure that satisfies high-density, switching-speed, endurance, retention and most importantly power-consumption
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Abstract Replace Si based flash memory with a universal memory High density Fast switch speed Charge retention / endurance Low power consumption Oxide based resistive switching TaO x -based asymmetric passive switching device
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Background Basic operation of Si charge-based memory Alternatives to Si Phase change random access memory (PRAM) Ferroelectric RAM (FERAM) Magnetoresistive RAM (MRAM) Resistive RAM (RRAM)
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Silicon Dynamic RAM Information stored as charge on MOS capacitor Capacitor is connected to the power supply and to the bitline through the MOSFET switch Streetman (2006)
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Silicon Flash Memory Non-volatile memory
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This note was uploaded on 03/21/2012 for the course MSE 461 taught by Professor Rockett during the Fall '08 term at University of Illinois, Urbana Champaign.

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MSE461_09_07_2011_Glauber_Resistive Memory - A fast...

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