MSE461_09_07_2011_Glauber_Resistive Memory

MSE461_09_07_2011_Glauber_Resistive Memory - A fast...

Info icon This preview shows pages 1–6. Sign up to view the full content.

View Full Document Right Arrow Icon
A fast, high-endurance and scalable non- volatile memory device made from asymmetric Ta2O5-x / TaO2-x bilayer structures John Glaub er Myoung-Jae Lee, Chang Bum Lee, Dongsoo Lee, Seung Ryul Lee, Man Chang, Ji Hyun Hur Young-Bae Kim, Chang-Jung Kim, David H. Seo, Sunae Seo, U-In Chung, In-Kyeong Yoo nd Kinam Kim
Image of page 1

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full Document Right Arrow Icon
Abstract Numerous candidates attempting to replace Si-based flash memory have failed for a variety of reasons over the years. Oxide- based resistance memory and the related memristor have succeeded in surpassing the specifications for a number of device requirements. However, a material or device structure that satisfies high-density, switching-speed, endurance, retention and most importantly power-consumption criteria has yet to be announced. In this
Image of page 2
Abstract Replace Si based flash memory with a universal memory High density Fast switch speed Charge retention / endurance Low power consumption Oxide based resistive switching TaO x -based asymmetric passive switching device
Image of page 3

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full Document Right Arrow Icon
Background Basic operation of Si charge-based memory Alternatives to Si Phase change random access memory (PRAM) Ferroelectric RAM (FERAM) Magnetoresistive RAM (MRAM) Resistive RAM (RRAM)
Image of page 4
Silicon Dynamic RAM Information stored as charge on MOS capacitor Capacitor is connected to the power supply and to the bitline through the MOSFET switch MOSFET gate is Streetman (2006)
Image of page 5

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full Document Right Arrow Icon
Image of page 6
This is the end of the preview. Sign up to access the rest of the document.
  • Fall '08
  • Rockett
  • Flash memory, random access memory, Non-volatile memory, nonvolatile memory device, Oxidebased resistance memory

{[ snackBarMessage ]}

What students are saying

  • Left Quote Icon

    As a current student on this bumpy collegiate pathway, I stumbled upon Course Hero, where I can find study resources for nearly all my courses, get online help from tutors 24/7, and even share my old projects, papers, and lecture notes with other students.

    Student Picture

    Kiran Temple University Fox School of Business ‘17, Course Hero Intern

  • Left Quote Icon

    I cannot even describe how much Course Hero helped me this summer. It’s truly become something I can always rely on and help me. In the end, I was not only able to survive summer classes, but I was able to thrive thanks to Course Hero.

    Student Picture

    Dana University of Pennsylvania ‘17, Course Hero Intern

  • Left Quote Icon

    The ability to access any university’s resources through Course Hero proved invaluable in my case. I was behind on Tulane coursework and actually used UCLA’s materials to help me move forward and get everything together on time.

    Student Picture

    Jill Tulane University ‘16, Course Hero Intern