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Unformatted text preview: CONDUCTION AT DOMAIN WALLS IN OXIDE MULTIFERROICS By J. Seidel, et al. MSE 461 Presented by Amber Choquette Date: September 23 rd , 2011 ABSTRACT Domain walls may play an important role in future electronic devices, given their small size as well as the fact that their location can be controlled. Here, we report the observation of room- temperature electronic conductivity at ferroelectric domain walls in the insulating multiferroic BiFeO3. The origin and nature of the observed conductivity are probed using a combination of conductive atomic force microscopy, high-resolution transmission electron microscopy and first-principles density functional computations. Our analyses indicate that the conductivity correlates with structurally driven changes in both the electrostatic potential and the local electronic structure , which shows a decrease in the band gap at the domain wall. Additionally, we demonstrate the potential for device applications of such conducting nanoscale features.features....
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This note was uploaded on 03/21/2012 for the course MSE 461 taught by Professor Rockett during the Fall '08 term at University of Illinois, Urbana Champaign.
- Fall '08