WEB_MatSE361_12_Photolithography_NOTES

WEB_MatSE361_12_Photolithography_NOTES - Chapter K :...

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1 Chapter K : Photolithography in Microelectronics MatSE 361 Chapter K Photolithography Introduction How does it work? Properties of PR Techniques Liftoff: image reversal Types of Lithography Image vs Direct write Physics Optics Phase Shift masks Future Limits Chemistry Acids, bases, solubility
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2 Reference Book MatSE 361 Chapter K Photolithography 1994
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3 Pattern Transfer MatSE 361 Chapter K Photolithography Objective : Create a 2-D pattern of metal, oxide, … on a Si wafer Options: Regular or Liftoff pattern transfer Si PR Al 1. Deposit Metal 2. Spin PR (maybe bake) Speed-thickness/conformal 3. Expose PR Mask/Direct 4. Develop PR Exposed PR soluble Bake (harden/cure) 5. Etch metal 6. Remove PR Ash (plasma)
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4 Lithography Steps: Liftoff Method MatSE 361 Chapter K Photolithography 1. Spin PR (maybe bake) 2. Expose PR 3. Treat surface (NH 3 ) 4. Develop PR Exposed PR soluble Bake (harden/cure) 5. Deposit Metal 6. Remove PR Liftoffs the metal Advantages : No etch Disadvantage : Sidewall
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5 Image Projection MatSE 361 Chapter K Photolithography Contact/Proximity Aligners Advantages : total wafer exposure (fast)
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This note was uploaded on 03/21/2012 for the course MSE 461 taught by Professor Rockett during the Fall '08 term at University of Illinois, Urbana Champaign.

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WEB_MatSE361_12_Photolithography_NOTES - Chapter K :...

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