3-Wafer Manufacturing - Part 3 Wafer Manufacturing...

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Ch3-1 Part 3 Wafer Manufacturing Reference Hong Xiao: Chap 4 Plummer: Chap 3
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Ch3-2 What is Semiconductor Conductivity between conductor and insulator Conductivity can be controlled by dopant
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Ch3-3 Periodic Table of the Elements
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Ch3-4 Why Silicon? Abundant, cheap - 26% of earth's crust. Silicon dioxide is very stable, strong dielectric - easy to grow in thermal process - However, Germanium oxide (GeO 2 ) is water soluble and dissociates at 800 o C. Large band gap - Wide operation temperature and doping range. Higher breakdown voltage.
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Ch3-5 Crystal Structure of Solids Single crystal: One repeated structure Polycrystalline: Some repeated structures Amorphous: No repeated structure at all Grain Grain Boundary Single crystal Polycrystalline Amorphous
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Ch3-6 Basic Crystal Structure Simple Cubic (SC) Body-centered Cubic (BCC) Face-centered Cubic (FCC) SC BCC FCC
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Ch3-7 Simple Cubic (SC) No. of atoms per unit cell = 1/8 x 8 = 1 Source: K.S. Institute of Technology, Bangalore
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Ch3-8 SC BCC FCC Atom per cell 1 Nearest neighbor distance a Radius of each Sphere Volume of each Sphere Max fraction of cell filled (Packing Density) 1 2 a 3 1 6 a 3 3 1 1 1 6 6 52.3% a a Basic Crystal Structure 3 2 a 3 4 a 3 3 16 a 3 3 3 2 3 16 8 67.98% a a 2 2 2 a 3 2 24 a 3 3 2 4 2 24 6 74% a a 2 4 a 4
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Ch3-9 Diamond Crystal Structure Offset from the first by a/4 in all three directions
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Ch3-10 Diamond Crystal Structure Diamond lattice (ex. C, Si, Ge, ect) Zincblende lattice (ex. GaAs, InP, GaP, ZnS ect) Zincblende lattice : Similar to diamond lattice, except that the lattice contains two different type of atoms.
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Ch3-11 Diamond Crystal Structure Diamond Atom per cell 8 Nearest neighbor distance Radius of each Sphere Volume of each Sphere Max fraction of cell filled (Packing Density) 3 4 a 3 8 a 3 3 128 a 3 3 3 8 3 128 16 34% a a
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Ch3-12 Crystal Directions and Planes Directions : Line from origin to point at u, v, w 1. Specific directions are given in brackets, [ uvw ] 2. Indices uvw are set of smallest integers. [ ½½ 1] goes to [112]. 3. Negative indices are written with a bar, [
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This note was uploaded on 03/10/2012 for the course EECS 102 taught by Professor Wen during the Spring '11 term at National Taipei University.

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3-Wafer Manufacturing - Part 3 Wafer Manufacturing...

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