6-Diffusion - Ch6-1 Part 6 Diffusion Reference Hong Xiao:...

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Unformatted text preview: Ch6-1 Part 6 Diffusion Reference Hong Xiao: Chap 5.4 Plummer: Chap 7 Runyan: Chap 8 Ch6-2 Diffusion Procedure 1. 2. 3. Cap Oxidation • SiO 2 做為不易通過的遮蔽層 • 在晶圓表面沉積一層摻雜物 氧化層 (Dopant Oxide), 如 : B 2 O 3 , P 2 O 5 . • 以熱氧化製程來消耗殘餘的 摻雜物氣體 . • 並在晶圓上成長一層 SiO 2 來 覆蓋摻雜物,避免摻雜物 outdiffusion. @1050 o C Ch6-3 Diffusion Procedure 4. Drive-in 5. Strip Oxide, Ready for Next Step • 將高溫爐升溫至 1200 o C 以提 供足夠的熱能讓摻雜物快速 的擴散到矽基片內 橫向擴散 : 1. 縮短閘極長度 2. 造成很大的寄生電容 Ch6-4 擴散源 • P 型摻雜物 – B 2 H 6 , 燒焦巧克力和太甜的味道 – 有毒易燃且易爆的 • N 型摻雜物 – PH 3 , 腐魚味 – AsH 3 , 像大蒜的味道 – 有毒易燃且易爆的 • 吹除淨化的氣體 – N 2 Ch6-5 MFC MFC MFC 控制閥 調壓器 Process N 2 Purge N 2 O 2 POCl 3 MFC 洗滌室 排氣 製程爐管 晶圓 燃燒室 磷擴散系統 Ch6-6 Ultra Shallow Junction (USJ) 1. 2. 3. 4. Ch6-7 Two-step process for producing a junction Ch6-8 Limited Source ( 有限材料源 ) Gaussian Function Ch6-9 Limited Source ( 有限材料源 ) Gaussian Function Ch6-10 Limited Source ( 有限材料源 ) 虛擬 實際 Ch6-11 Infinite Source ( 無限材料源 ) Error Function 擴散 C S : 擴散源的濃度 (濃度保持固定) C 起始分佈 擴散分佈 Ch6-12 Infinite Source ( 無限材料源 ) Error Function Substrate 濃度 N 1 Dopant 源源不絕的提供進到晶體中 Constant surface concentration N ( 固態溶解度 ) Ch6-13 Diffusion...
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6-Diffusion - Ch6-1 Part 6 Diffusion Reference Hong Xiao:...

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