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Chap04_MOSFETå�ºæ�¬ç��è«�å��å�ºæ�&no

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Unformatted text preview: hap.4 MOSFET 基 本 理 論 及 基 本 邏 輯 閘 MOSFET 基本理論 基本理論 基本理論 基本理論 及基本邏輯閘 及基本邏輯閘 及基本邏輯閘 及基本邏輯閘 Chap.4 hap.4 MOSFET 基 本 理 論 及 基 本 邏 輯 閘 The Structure of an NMOS tox B (Bulk) G(Gate) S(Source) D(Drain) Oxide Source Drain n + n + Channel Length L Substrate (p-Si) Channel Width W hap.4 MOSFET 基 本 理 論 及 基 本 邏 輯 閘 The MOS Transistor Polysilicon Aluminum hap.4 MOSFET 基 本 理 論 及 基 本 邏 輯 閘 Symbols of NMOS & PMOS hap.4 MOSFET 基 本 理 論 及 基 本 邏 輯 閘 Depletion Region in NMOS when V GS < V TO V TO : Threshold Voltage V GS < V TO V DS = 0 V S = 0 V B = 0 hap.4 MOSFET 基 本 理 論 及 基 本 邏 輯 閘 Channel in NMOS when V GS > V TO V GS > V TO V DS = 0 V S = 0 V B = 0 hap.4 MOSFET 基 本 理 論 及 基 本 邏 輯 閘 (a) NMOS Operating in the Linear Region V D small V B = 0 hap.4 MOSFET 基 本 理 論 及 基 本 邏 輯 閘 (b) n-MOS Operating at the Edge of Saturation V B = 0 hap.4 MOSFET 基 本 理 論 及 基 本 邏 輯 閘 (c) n-MOS Operating beyond Saturation V B = 0 hap.4 MOSFET 基 本 理 論 及 基 本 邏 輯 閘 I-V Characteristics of an NMOS T gs ds V V V- = Cut-off region Drain Voltage V DS Drain Current I D Linear Region Saturation Region hap.4 MOSFET 基 本 理 論 及 基 本 邏 輯 閘 (1) Cut-off region : (2) Linear region : (Triode region) (3) Saturation region : T GS V V < T GS DS V V V- < T GS DS...
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Chap04_MOSFETå�ºæ�¬ç��è«�å��å�ºæ�&no

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