ATF54143 - Agilent ATF-54143 Low Noise Enhancement Mode...

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Agilent ATF-54143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package Data Sheet Description Agilent Technologies’s ATF-54143 is a high dynamic range, low noise, E-PHEMT housed in a 4-lead SC-70 (SOT-343) surface mount plastic package. The combination of high gain, high linearity and low noise makes the ATF-54143 ideal for cellular/PCS base stations, MMDS, and other systems in the 450 MHz to 6 GHz frequency range. Features • High linearity performance • Enhancement Mode Technology [1] • Low noise figure • Excellent uniformity in product specifications • 800 micron gate width • Low cost surface mount small plastic package SOT-343 (4 lead SC-70) • Tape-and-Reel packaging option available Specifications 2 GHz; 3 V, 60 mA (Typ.) • 36.2 dBm output 3 rd order intercept • 20.4 dBm output power at 1 dB gain compression • 0.5 dB noise figure • 16.6 dB associated gain Applications • Low noise amplifier for cellular/ PCS base stations • LNA for WLAN, WLL/RLL and MMDS applications • General purpose discrete E-PHEMT for other ultra low noise applications Note: 1. Enhancement mode technology requires positive Vgs, thereby eliminating the need for the negative gate voltage associated with conventional depletion mode devices. Surface Mount Package SOT-343 Pin Connections and Package Marking SOURCE DRAIN GATE SOURCE 4Fx Note: Top View. Package marking provides orientation and identification “4F” = Device Code “x” = Date code character identifies month of manufacture.
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2 ATF-54143 Absolute Maximum Ratings [1] Absolute Symbol Parameter Units Maximum V DS Drain - Source Voltage [2] V5 V GS Gate - Source Voltage [2] V -5 to 1 V GD Gate Drain Voltage [2] I DS Drain Current [2] mA 120 P diss Total Power Dissipation [3] mW 360 P in max. RF Input Power dBm 10 [5] I GS Gate Source Current mA 2 [5] T CH Channel Temperature ° C 150 T STG Storage Temperature ° C -65 to 150 θ jc Thermal Resistance [4] ° C/W 162 Notes: 1. Operation of this device in excess of any one of these parameters may cause permanent damage. 2. Assumes DC quiescent conditions. 3. Source lead temperature is 25 ° C. Derate 6 mW/ ° C for T L > 92 ° C. 4. Thermal resistance measured using 150 ° C Liquid Crystal Measurement method. 5. The device can handle +10 dBm RF Input Power provided I GS is limited to 2 mA. I GS at P 1dB drive level is bias circuit dependent. See application section for additional information. Product Consistency Distribution Charts [6, 7] V DS (V) Figure 1. Typical I-V Curves. (V GS = 0.1 V per step) I DS (mA) 0.4V 0.5V 0.6V 0.7V 0.3V 02 14 6 5 37 120 100 80 60 40 20 0 OIP3 (dBm) Figure 2. OIP3 @ 2 GHz, 3 V, 60 mA. LSL = 33.0, Nominal = 36.575 30 34 32 38 40 36 42 160 120 80 40 0 Cpk = 0.77 Stdev = 1.41 -3 Std GAIN (dB) Figure 3. Gain @ 2 GHz, 3 V, 60 mA. USL = 18.5, LSL = 15, Nominal = 16.6 14 16 15 18 17 19 200 160 120 80 40 0 Cpk = 1.35 Stdev = 0.4 -3 Std +3 Std NF (dB) Figure 4. NF @ 2 GHz, 3 V, 60 mA.
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ATF54143 - Agilent ATF-54143 Low Noise Enhancement Mode...

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