hw4solutions0902

hw4solutions0902 - n i is about 1,000 times less for Si and...

Info iconThis preview shows pages 1–5. Sign up to view the full content.

View Full Document Right Arrow Icon
ECE G201, Homework 4 Solutions, 2/09 4. 3.4, Text: The conductivity of intrinsic Ge will be much greater than that of Si or GaAs because the number of carriers will be orders of magnitude greater. The mobility of the different carriers varies, but not nearly as much as the number of carriers.
Background image of page 1

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Background image of page 2
Background image of page 3

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Background image of page 4
Background image of page 5
This is the end of the preview. Sign up to access the rest of the document.

Unformatted text preview: n i is about 1,000 times less for Si and 1,000,000 times less for GaAs. 1. 2. 3. 5. 6. Note that the text asked for the case where N A > N D . This was solved by mistake for N D = 10 19 . 7. 8. 9. 10. 11. 12. 13. 14....
View Full Document

This document was uploaded on 03/22/2012.

Page1 / 5

hw4solutions0902 - n i is about 1,000 times less for Si and...

This preview shows document pages 1 - 5. Sign up to view the full document.

View Full Document Right Arrow Icon
Ask a homework question - tutors are online