hw71103 - EECE 7201 H.W. #7, Due March 25, 2011 1. A planar...

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EECE 7201 H.W. #7, Due March 25, 2011 1. A planar silicon diode is designed as follows: p+ - n junction, with junction depth of 0.5µm from the surface of the wafer, fabricated in a 20 micron thick layer of lightly doped silicon (this layer ends 20 microns from the surface) over a very heavily doped silicon substrate (this is the thick silicon substrate). Doping: p+ - 10 19 n - 10 15 n+ substrate - large, you can assume 10 18 but it doesn't matter. Lifetimes: t p = t n = 10 -7 sec T = 300K a. What is the breakdown voltage of the diode, ignoring 3-dimensional effects? (refer to figures in notes) b. What is the breakdown voltage of a square diode of the same doping, (shape as viewed from above) 0.1 cm x 0.1 cm in dimension? c. What is the breakdown voltage of a circular diode, again of the same doping, 0.1 cm in diameter? d. Considering only one-dimensional effects, does the onset of series resistance effects, or high injection effects, occur first in this diode? (diode from previous problem, one-dimensional analysis) Estimate the onset of high injection effects as the voltage at which p n at x n = n no . Estimate the onset of series resistance effects by computing the resistivity of the bulk semiconductor, and determining the voltage at which the current is half of that predicted by the ideal diode equation. Examine each effect separately, assuming no other non-ideal effects. T = 300K. e. What will the reverse current be at -50V, including generation in the depletion layer, if the traps are
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This note was uploaded on 03/22/2012 for the course ECE G201 taught by Professor Nm during the Spring '11 term at Northeastern.

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hw71103 - EECE 7201 H.W. #7, Due March 25, 2011 1. A planar...

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