MIE364S_T_9_11 - MIE364H1S Methods of Quality Control and...

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MIE364H1S Methods of Quality Control and Improvement Course Instructor: Prof. V. Makis Tutorial #9 1. An engineer is interested in the etch rate for silicon nitride in developing a nitride etch process on a single wafer plasma etcher. The process uses C 2 F 6 as the reactant gas. It is possible to vary the gas flow, the power applied to the cathode, the pressure in the reactor chamber, and the spacing between the anode and the cathode (gap). A single replicate of a 2 4 design is used to investigate this process. The factor levels used in the design are shown here: Design Factors Level Gap - A (cm) Pressure - B (mTorr) C2F6 Flow - C (SCCM) Power - D (w) Low (-) 0.8 450 125 275 High (+) 1.2 550 200 325 The following table presents the data from the 16 runs of the 2 4 design: A B C D Etch Rate (Gap) (Pressure) (C2F6 Flow) (Power) ( Ǻ /min) -1 -1 -1 -1 550 1 -1 -1 -1 669 -1 1 -1 -1 604 1 1 -1 -1 650 -1 -1 1 -1 633 1 -1 1 -1 642 -1 1 1 -1 601 1 1 1 -1 635 -1 -1 -1 1 1037 1 -1 -1 1 749 -1 1 -1 1 1052 1 1 -1 1 868 -1 -1 1 1 1075 1 -1 1 1 860 -1 1 1 1 1063 1 1 1 1 729 a. Analyze the data and draw conclusions.
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This note was uploaded on 03/31/2012 for the course MIE 364 taught by Professor Makis during the Spring '12 term at University of Toronto- Toronto.

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MIE364S_T_9_11 - MIE364H1S Methods of Quality Control and...

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