US5115445_TOT

US5115445_TOT - United States Patent [19] Mooradian [54]...

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Unformatted text preview: United States Patent [19] Mooradian [54] MICROCHIP LASER ARRAY [75] Inventor: [73] Assignee: ' Aram Mooradian, Winchester, Mass. Massachusetts Institute of Technology, Cambridge, Mass. [21] App]. No.: 571,073 [22] Filed: Aug.22,1990 Related US. Application Data [60] Continuation-in-pan of Star. No. 512,981, Apr. 23, 1990, which is a division of Ser. No. 308,251, Feb. 9, 1989, Pat. No. 4,953,166, which is a continuation-in: part of Ser. No. 151,396, Feb. 2, 1988, Pat. No. 4,860,304. [51] Int. Cl.5 ............................................ .. H015 3/094 [52] US. Cl. ...................................... .. 372/75; 372/41; 372/92 [58] Field of Search ...................... .. 372/40, 41, 75, 92 [56] References Cited U.S. PATENT DOCUMENTS 4,002,725 1/1977 Bridenbough et a]. ........... .. 423/263 4,156,206 5/1979 Comerford et al. .......... .. 331/945 4,468,850 9/ 1984 Liau ct a]. . . . . . . . . . . . . . . . . .. 29/569 4,677,629 6/ 1987 Lesh . . . . . . . . . . . . . . . . . .. 372/18 4,718,070 1/1988 Liau et a]. . . . . . . . . .. 372/50 4,722,092 1/1988 Liau et al. . 372/96 4,734,912 3/1988 Scerbak et a]. . 372/27 4,739,507 4/1988 Byer et a1. .......... .. 372/22 4,743,091 5/1988 Gelbert ........... .. 350/252 4,760,578 7/1988 Oshima et al. 372/45 4,772,787 9/1988 Trommer ........ .. 250/227 4,777,148 10/1988 Liau et al. ....... .. 437/129 4,784,722 11/1988 Liau et a1. 156/649 4,797,893 1/1989 Dixon . . . . . . . . . . . . . . . . . . . .. 372/34 4,807,238 2/1989 Yokomori 372/32 4,935,939 6/1990 Liau et a]. ........................... .. 372/98 FOREIGN PATENT DOCUMENTS 90/00644 2/ 1990 European Pat. Off. . OTHER PUBLICATIONS “Mass—Transported GaInAsP/InP Lasers”, Liau et al., The Lincoln Laboratory Journal, vol. 2, No. 1, (1989), pp. 77—94. . “Five Watt Continuous-Wave AlGaAs Laser Diodes”, U8005115445A [11] 7 Patent Number: 5,115,445 [45] Date of Patent: May 19, 1992 Electronic Letters, vol. 22, No. 11, May 22, 1986, pp. 605—606, Harnagel et al. “2.4 W CW 770 nm Laser Arrays with Nonabsorbing Mirrors”, Electronic Letters, vol. 23, No. 10, May 7, 1987, pp. 525—527, Welch et a1. “Ultra—High—Power Quasi-CW Monolithic Laser Diode Arrays With High Power Conversion Effi- ciency", Electronics Letters. vol. 23, No. 14, Jul. 2, 1987, pp. 743—744, Harnagel et al. “High—Power, 8W CW Single-Quantum—Well Laser Diode Array”, Electronics Letters, vol. 24, No. 2, Jan. 21, 1988, pp. 113-115, Welch et a1. “Two—Dimensional Array of GaInAsP/InP Sur- face-Emitting Lasers”, Electronics Letters, vol. 21, No. 4, Feb. 14, 1985, pp. 162-164, Uchiyama et a1. ' “Spectral Characteristics of External—Cavity Con- trolled Semiconductor Lasers”, Fleming et al., IEEE Journal of Quantum Electronics, vol. QE—l7, No. 1, Jan. 1991, pp. 44.59. “Monolithic GaAs/AlGaAs Diode Laser/Deflector Devices for Light Emission Normal to the Surface”, Windhorn et al., ApplPhysLett. 48(24), Jun. 16, 1986, pp. 1675-1677. ,, “Angular Chlorine Ion—Beam—Assisted Etching of GaAs and AlGaAs”, Goodhue et al., Inst. Phys. Conf. Ser. No. 83: Ch. 7, pp. 349-354. “Monolithic Two—Dimensional Surface-Emitting Ar- rays of GaAs/AlGaAs Diode”, Appl. Phys. Lett. 52 (15), Oct. 12, 1987, Donnelly et al., pp. 1138—1140. (List continued on next page.) Primanz Examiner—James W. Davie Attorney, Agent, or Firm—Hamilton, Brook, Smith & Reynolds " [57] , ABSTRACT A method and apparatus for generating a high power beam of light is described in which individual laser pixel elements are laterally defined and isolated in a wafer of solid state gain medium material and mirrors are formed on each side of the wafer to produce an optical cavity resonator. An array of diode lasers is used to pump | adjacent pixels to stimulate light emission by each pixel. 3 52 Claims, 2 Drawing Sheets 5,115,445 Page 2 OTHER PUBLICATIONS “Surface—Emitting GaAlAs/GaAs Linear Laser Ar- rays with Etched Mirrors”, Yang et al., Appl. Phys. Lett. 49 (18), Nov. 3, 1986, pp. 1138—3139. "Coherent Addition of AlGaAs Lasers Using Micro- 1enses and Diffractive Coupling”, Leger et al., App]. Phys Lett. 52 (21), May 23, 1988, pp. 1771—1773. “High-Performance Heat Sinking for VLSI”, Tucker- man et al., IEEE Electron Device Letters, Col. EDL—Z, No. 5, 1981 pp. 126-129. “Surface—Emitting Two-Dimensional Laser Diode Arrays Constructed on Zig—Zag Heat Sink Surface”, Sheem, US. Dept. of Energy by Lawrence Livermore National Laboratory. “Electron—Beam—Pumped Two—Dimensional Semicon- ductor Laser Array with Tilted Mirror Resonator”, Tong et al., App]. Phys. Lett. 52(16), Apr. 18, 1988, pp. 1303-1305. v “Room-Temperature Pulsed Oscillation of GaAlAs/- GaAs Surface Emitting Injection Laser”, Iga et al., AppI.Phys.Lett. 45(4), Aug. 15, 1984, pp. 348—350. “Distributed—Feedback Surface—Emitting Laser Diode with Lateral Double Heterostructure”, Ogura et al., Electronics Letters, vol. 23, No. 14, Jul. 2, 1987, pp. 758-760. “Phase-Locked Operation of a Grating—Surface~Emit- ting Diode Laser Array”, Carlson et al., App]. Phys.Let- ter. 50(19), May 11, 1987, pp. 1301—1303. “Operation of Individual Diode Lasers as a Coherent Ensemble Controlled by a Spatial Filter within an Ex- ternal Cavity”, Rediker et al., Appl.Phys.Lett., vol. 46, No. 2, Jan. 15, 1985, pp. 134-135. Kane, Thomas J. et al., “Frequency stability and offset locking of a laser—diode—pumped Nd:YAG monolithic nonplanar ring oscillator” Optics Letters, 12, pp. 175—177 (1987). Castleberry, et al., “A Single Mode 2.06 Urn Miniature Laser”, Digest of Technical Papers, Jan. 21-24, 1974, MB7, pp. 1—4. Saruwatari, et al., “Electroluminescent Diode Pumped Miniaturized LiNd P4012 Lasers”, Review of the Elec- trical Communication Laboratories, vol. 26, Nos. 9—10, Sep.—Oct. 1978 pp. 1111—1128. Owyoung et al., “Stress—induced tuning of a di- ode-laser-excited monolithic Nd:YAG laser”, Optics Letters, vol. 12, No. 12, Dec. 1987, pp. 999—1001. Zhou et al., “Efficient, frequency—stable laser—di- ode—pumped Nd:YAG laser", Optics Letters, vol. 10, No. 2, Feb. 1985, pp. 62—64. Kubodera et al., “Pure single-mode LiNdP4012 solid-state laser transmitted for 1.3 um fiber—optic com- munications”, Applied Optics, vol. 21, No. 19, pp. 3466—3469. Kubodera et al., “Efficient LiNdP4012 lasers pumped with a laser diode", Applied Optics, vol. 18, No. 23, Dec. 1979, pp. 3882—3883. Winzer et al., “Laser Emission from Miniaturized NdAl3(BO3)4 Crystals with Directly Applied Mir— rors”, IEEE, 1978, pp. 840-843. Winzer et al., “Laser Emission from Polished NdP5014 Crystals with Directly Applied Mirrors”, Applied Physics, 11-121—130 (1976). Owyoung et al., '“Gain switching of a monolithic sin- gle—frequency laser—diode-excited Nd:YAG laser", Optics Letters, vol. 10, No. 10, Oct. 1985, pp. 484—486. Stone et al., “Self—Contained LED—Pumped Single—- Crystal NszAG Fiber Laser”, Fiber and Integrated Optics, vol. 2, No. 1, 1979, pp. 19-46. US. Patent May 19, 1992 Sheet 1 of 2 5,115,445 US. Patent May 19, 1992 Sheet 2 of 2 5,115,445 5,115,445 1 MICROCI—IIP LASER ARRAY GOVERNMENT SUPPORT The Government has rights in this invention pursuant to Contract No F19628-85C—0002 awarded by the De- partment of the Air Force. BACKGROUND OF THE INVENTION This application is a continuation-in-part of U.S. Ser. No. 512,981 filed Apr. 23, 1990 which is a divisional application of U.S. Ser. No. 07/308,251 filed Feb. 9, 1989, now U.S. Pat.'No. 4,953,166, which is a continua- tion-in-part of U.S. Ser. No. 151,396 filed Feb. 2, 1988 (now U.S. Pat. No. 4,860,304) and incorporated herein by reference _ ‘ This invention relates to laser arrays. Arrays of lasers are of great interest for applications requiring higher power levels than can be attained with single devices. Development efforts to date have con- centrated mainly on fabrication of linear arrays of edge- emitting GaAs/AlGaAs lasers. Harnagel et al., Electron. Lett. b 22, 605 (1986) report formation of 5 Watt continuous-wave (CW) AlGaAs 1 mm laser diode bars in the form of monolithic 100 to 140 stripped linear arrays. Welch et al., Electron. Lett. 23, 525 (1987) present data on 770 nm, 10 strips AlGaAs laser arrays with a 2.4 W CW output. Similar success is reported by Hamagel et al., in Electron. Lett. 23, 744 (1987) and Welch et al., in Electron. Lett. 24, 113 (1988). While these efforts have met with considerable suc- cess, a need for still higher power levels have led those skilled in the art, to attempt, along with continuing work on linear diode arrays, to achieve still higher output power by stacking and bonding these linear arrays to form composite two-dimensional arrays In the stacked and bonded array, linear diode laser arrays and slabs of electrical and heat conducting mate- rial forming individual heat sinks, are alternately stacked upon each other. The individual heat sinks are then thermally connected at their edges to a main heat sink from which the heat can be removed by several different techniques In this arrangement, heat is trans- ferred from the linear diode laser arrays into the indi- vidual heat sinks and then traversely along the individ- ual heat sinks to the main heat sink. It is difficult to transfer heat from the linear laser arrays to the main heat sink and, thus, difficult to maintain temperature uniformin across the entire array. Microchannels, through which cooling fluid could be passed, could be incorporated in the individual heat sinks, but only with a significant increase in fabrication complexity. As an alternate approach to such composite arrays, monolithic two-dimensional arrays consisting of sur- face-emitting semiconductor lasers are also being inves- tigated. Several types of surface-emitting GaAs/Al- GaAs and GalnAsP/InP diode lasers have been demon- strated. These include lasers with resonant cavities that are normal to the surface [lga et al., App]. Phys. Lett. 45, 348 (1948); Uchiyama et al., Electron Lett. 21, 162 (1985) and Ogura et al., Electron. Lett. 23 758 (1987)}, lasers that incorporate a chemically etched 45" mirror [A. J. Spring ThOrpe, Appl. Phys. Lett. 31, 524 (1979)], and lasers that utilize a second-order grating coupler to achieve emission normal to the surface [Carlson et al., App]. Phys. Lett. 50, 1301 (1987)]. A second approach to the fabrication of monolithic two-dimensional arrays is to couple ed ge-emitting diode '10 15 20 25 30 35 40 45 50 55 65 2 lasers with external mirrors that deflect the radiation from the laser facets by 90°. Liau and Walpole [App]. Phys. Lett. 50, 528 (1987)] have fabricated such arrays of devices that combine GaInAsP/InP laser with a para- bolic deflector adjacent to one or both facets. The facets and deflectors were formed by selective chemical etch- ing followed by a mass-transport process, other tech- niques, such as ion-beam-assisted etching (IBAE) [Windhorn et al., Appl. Phys. Lett. 48, 1675 (1986); Goodhue et al., Gallium Arsenide and Related Com- pounds 1986, ed. W. T. Lindley (Inst. Phys. Conf. Ser. 83, Briston, 1987, p. 349; Donnelly et al., Appl. Phys. Lett. 51 1138 (1987)] and ion milling [Yang et al., App]. Phys. Lett. 49, 1138 (1986)] have been used to form 'the non-cleaved laser facets and adjacent deflectors Mono- lithic two-dimensional GaAs/AlGaAs diode laser ar- rays, in which all of the facets and deflectors were formed by IBAE have recently been reported by Don- nelly ct al., above. Although these monolithic tech- niques hold great promise for large-area high-power laser arrays, they are still in the early stages of develop- ment. In some of them, the quality of the mirrors and windows are not as good as the conventional cleaved facets found in linear arrays. Donnelly in US Pat. No. 4,881,237 issued Nov. 14, 1989 offers a hybrid approach in which a high power CW. or high average power pulsed array consisting of linear arrays of edge-emitting lasers mounted in grooves formed in substrates, is formed. The substrates are formed of material with good heat conduction proper- ties, such as Si or Cu. The grooves have flat bottoms and 45° sidewalls forming reflective mirrors. In one embodiment, the grooves and sidewalls are etched into a Si substrate containing microchannels for cooling fluid flow. All of these approaches suffer from fabrication com- plexity, cost and reliability problems. The present in- vention offers a relatively low cost and relatively simple and reliable solution to these problems. SUMMARY OF THE INVENTION In accordance with the invention, a two-dimensional array of lasers is created by forming a flat wafer of laser solid state material and laterally isolating volumes of said material by introducing optical loss around the isolated volumes and, in this fashion, forming a gain medium array. This array is then disposed between mirrors. In one embodiment of the invention. the dis- tance between the mirrors is selected so that the gain bandwidth of the gain medium is less than, or substan- tially equal to. the frequency separation of modes of light propagated in the cavity and the frequency of only one such mode falls within the gain bandwidth of the medium. This results in single-frequency emission from the gain medium. Alternatively, the distance need not be so limited where multi-mode operation is desired or can 'be tolerated. ' An array of pumping lasers is formed and disposed adjacent or in contact with one of the gain medium mirrors. The mirror on the side of the gain medium opposite the pumping lasers is transparent to light at the frequency of the pumping lasers and reflective of light emitted by the gain medium; whereas the mirror on the output side of the gain medium is transparent to the gain medium emissions and reflective of the pumping laser transmission. In this manner, a two-dimensional laser array is formed in which the pumping lasers stimulate 5,115,445 3 emission of light from each of the gain medium volumes adjacent each pumping laser. Each isolated volume thus forms a pixel. Preferably, the pumping lasers are com- prised of an array of diode lasers, each diode laser cor- responding to a pixel in the gain medium. As noted in the parent application, the wafer slabs , can be substantially thin. i.e., about 730 pm, or less, for materials such as Nd YAG. Heat generated in the me- dium can be efficiently conducted in a substantially longitudinal direction, rather than transversely across the array by providing an optically transparent heat exchanger at one end of the array. (preferably the out- put end) to prevent destruction of the array by exces- sive heat. An optional lens or binary optic lenslet arra‘y may be coupled between the output of the two-dimensional pumping laser array and the gain medium cavity array to focus light onto the isolated gain medium volumes. Also, an array of non-linear optical converters for generating higher harmonics or parametrically con- verted lower frequencies of the laser light emissions may be coupled, asby bonding to the output side of the gain medium cavity, thereby adding to the versatility of the array. ‘ Finally, an integrated circuit chip formed of transpar- ent material, such as Si, with control elements and drive circuits may be bonded to an output face of the con- verter array to control and phase steer the output beam of the array. The resultant structure is relatively simple to fabri- cate and is robust in design, resulting in high reliability and low down time. Failure of isolated elements of the array do not result in catastrophic failure of the entire system. ' BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 depicts a twoodimensional laser array system of the invention. FIG. 2 is a front view of the gain medium array 18 taken along lines 11—11 of FIG. 1. FIG. 3 is an enlarged fragmentary view of a portion of the array 18 of FIG. 2. FIG. 4 is a sectional view taken along lines IV—IV of FIG. 3. FIG. 5 is a partial sectional View of an alternate em- bodiment. DESCRIPTION OF THE PREFERRED EMBODIMENT The theory on which the present invention is based is explained in parent application. U S. Ser. No. 512,981. In essence, it states that single mode laser oscillation may be achieved by forming a laser cavity in which the cavity length l is less than c/vag, where vg= gain band- width. To insure that the gain medium will lase, it is necessary that there be at least some overlap of the gain curve with one of the intracavity modes. Assuring such overlap is accomplished by an appropriate choice of gain material and cavity length. The resultant laser is termed a microchip laser, since it can be fabricated in micro-size dimensions. Typically, a microchip laser is comprised of a solid-state gain medium disposed be- tween a pair of mirrors. The mirrors are coated with multiple layers (20-30 layers) of dielectric material. The gain medium is pumped optically by a laser, preferably a diode laser array. The output light is focused by a lens onto one of the mirrors. The mirror adjacent the pump laser transmits light from the pump laser but reflects 10 15 20 25 30 35 45 50 SS 60 65 4 light generated within the gain medium. The output mirror functions in reverse. The length l of the gain medium is selected so that léc/vag where Vg is the bandwidth of the gain medium. In this case, a single mode only will oscillate within the gain medium when the absolute frequency of the cavity mode falls within the gain bandwidth so that the output light from the laser is single frequency. The mirrors may be separate elements bonded directly to the gain medium or they may be multilayer coatings deposited directly on the opposing flat surfaces of the gain medium. ‘ Optionally, a dielectrically coated flat wafer of a nonlinear optical material may be located to receive light from the microchip laser. The nonlinear optical material has the property that, when exposed to mono- chromatic light, it generates a beam of light including harmonics of the incident beam. Suitable nonlinear opti- cal materials are for example, MgO:LiNb03 and KTP (potassium titanyl phosphate). The microchip laser may be continuously tuned by a number of techniques that are well known. including the application of a longitudi- nal or transverse stress to the crystal or by modifying the refractive index of the crystal, thermally. An harmonic crystal with its own resonant cavity may be provided separate from the microchip laser or it may be bonded directly to the output end of the micro- chip laser using an optically transparent cement. The use of flat-flat cavities on the harmonic crystal simplify the fabrication process by using similar wafer process- ing technology as that for the microchip laser However, any of the well-known techniques for a resonant har- monic cavity may also be used in conjunction with the microchip laser, such as the unidirectional ring resona- tor or spherical mirror cavity. Further, the nonlinear material may be incorporated within the laser cavity itself. In addition to harmonic generation by means of a suitable nonlinear material, nonlinear frequency conver- sion may be carried out in suitable nonlinear optical materials using optical parametric oscillation or amplifi- cation, as well as frequency sum or difference mixing, using the single frequency microchip laser. Similar cav- ity fabrication may be used to create a microchip laser whose single frequency light is frequency converted by parametric conversion into light of two lower frequen- cies. In this parametric conversion microchip laser, the resonators differ from those previously described only in that the nonlinear optical material is a parametric conversion material, such as LiNb03 or KNb03 and the cavity coatings are chosen according to the well-known art form for such devices. All of the above is set forth in the referenced parent application. Referring now to FIG. 1, a microchip laser array system 10 will now be described in connection there- with. In this system, the gain medium array 18 is formed by simply not dicing the gain medium into separate chips, as described in the parent application. That is, by leaving the microchip laser in wafer form, and associat- ing the microchip laser wafer with two-dimensional diode laser array 12 to pump the microchip laser array, a two-dimensional array of microchip lasers is immedi- ately formed. The two-dimensional array of microchip lasers consists of an array of laser diodes 12 in which pumping light from each diode in array 12 is focused by lens 14 on the individual volumes or pixels 26 of the gain medium (FIGS. 2 and 3) of 18. . ' Each pixel 26 is laterally isolated from its neighbor by introducing a lossy barrier 28 horizontally and verti- 5,115,445 5 cally through the width of the wafer to spoil the gain and prevent transverse lasing One way to generate the lossy barrier is to cut slots in the wafer around each pixel and fill in the slots with lossy material. Another way would be to particle (ions, electrons, etc.) bom- bard, dopant diffuse, or otherwise introduce absorption centers in the gain medium along these lines. Light from the laser diodes array 12 excites the microchip laser pixels 26 causing emission of light at spot 30. An important feature of the present invention is the heat transfer capability of the present invention and, in particular, the essentially longitudinal heat conducting aspect of the gain medium array 18 when combined with a light transparent high thermal conductivity body coupled to the light output side of the array 18. The gain medium of the present invention can be fabricated from an extremely thin wafer. For example, the length L of the wafer can be equal to approximately 730 pm in the case of 1.06 pm NszAG material. Heat generated in the gain medium may thus be conveniently coupled out of the array 18 by simply bonding a trans- parent body 16 having good heat conductivity proper- ties, such as sapphire or diamond, or equivalent other material to one end of the array 18, preferably the end with the mirror 34 as in FIG. 1. Optionally, microchan- nels (not shown) for introducing coolant to increase thermal transfer may be formed in body 16, as neces- sary. As compared to a single large laser which would generate equivalent power, the present invention greatly reduces the volume of each pixel of light; hence the heat removal rate is much greater than if the volume of all pixels were equal to the volume of the single laser. This longitudinal heat transfer feature enables scale- up of the array size and a proportional increase in out- put power. Each array element, or pixel, may occupy about 1 mm2 of area, or less. Each pixel may generate 0.] Watts or more of power A 100 by 100 pixel array is therefore capable of generating 10,000X0.1 Watts or 1 kw of power while occupying an area of only 10,000 mmz. It is further contemplated that by suitable scaling 1000 by 1000 pixel arrays, or higher, can be fabricated as above to produce 100 kw or higher output power. Optionally, the microchip laser wafer 18 may be com- bined with nonlinear optical material 20 within a reso- nant cavity formed between mirrors 34 and 32 to pro- vide frequency conversion. If, however, the nonlinear optical material is not incorporated in the cavity, an array can still be constructed by simply placing a wafer with nonlinear optical material and Fabry-Perot reso- nant cavity in association with the other wafers, as shown in FIG. 8b of the parent application. The reso- nant frequency of the nonlinear optical material cavity must be matched to the microchip frequency in the manner described above. For sufficiently high power 'from each pixel, a nonlinear frequency converter mate- rial may be bonded to the array without the use of a resonant cavity around the nonlinear material. By properly modulating the phase of each microchip ' laser spot 30 using, for example, individually address- able phase modulators placed in the path of the output beam or within the cavity of each microchip laser, it is possible to phase steer the array beam 24 and thereby direct the beam. These phase modulators may be inte- grally formed on a silicon wafer 22, along with address- able drive circuits and bonding pads. The silicon mate- rial is bonded to the electro-optic material which serves as the phase modulator and provides the surface for the 10 15 20 25 30 35 45 50 55 65 6 electrodes which drive the electro-optic phase modula- tor array. Electro-optic material, such as GaAs or Lith- ium Niobate may also be used in place of the silicon, since the electrodes may be placed in a cavity formed on such material. Also, the output of the two-dimensional array of single-frequency microchip lasers may be coherently combined into a single beam using well-known tech- niques of binary optics (not shown). The two dimensional array 18, according to the in- vention, exhibits low pump threshold, high efficiency, and single frequency operation. The laser pixels 26 can be continuously tuned across their gain-bandwidth in a single frequency using a trans- versely or longitudinally applied stress applied to the gain medium or by applying a voltage to an intracavity electro-optic modulator. The incorporation of nonlin- ear optical material either inside or outside of the cav- ity, generates higher harmonic frequencies or paramet- rically generated lower frequencies. The output from such an array, in the visible or ultraviolet region, is useful for read and write optical discs projection televi- sion applications, and at high powers is useful for mate’ rials processing, etc. By phase locking the individual pixel beams to a coherent laser oscillator signal and adding a binary optical lenslet array in the path of the beam, the combined beam can result in a diffraction limited beam capable of being focused on a precise spot, which would be useful for eye surgery and the like. Referring now to FIG. 5, an alternate embodiment will be described in which like elements from FIG. I retain the same numeral references with a prime suffix. It is also assumed that the items to the left of the mirror 34' in the drawings of FIG. 1, are present and un- changed. In the embodiment of FIG. 5, a plurality of gain medium pixels in the array 18' are tuned to differ- ent frequencies by any of the techniques described in the parent application, such as stress tuning. electro-op- tic crystal tuning, thermal tuning, etc; Upper or lower frequencies are generated by non-linear optical array 20' and the resultant beam of light 24' is focused by binary optic lens 22’ onto a fiber optic bundle 60 consist- ing of cladding 50 and a core 52 of one or more fibers or separate fibers (single or multi-mode) bundled together. In this manner, a multi-frequency wide band communi- cation system can be formed with each frequency trans- mission constituting a separate signal which can be modulated by well-known means. The gain medium array need not be a flat-flat shape, but may be formed with a variety of curvatures to pro- vide a stable or unstable resonator when the mirrors are formed over the surface. Individual power supplies may be used to power each pump diode laser or groups of diode lasers to further enhance complete system reliability. An external cavity may be formed, as suggested by Fleming et a]. in IEEE J. Quantum Electron, QE—l7, 44 (1981) by adding a partly reflective feedback mirror adjacent to the gain medium array. Moreover, by using the Talbot self-imaging effect [1. R. Leger. M. L. Scott and W B. Veldkamp.AppI. Phys Lett. 52, 1771 (1988)] in which the feedback mirror is placed at one of the Talbot distances, efficient diffraction coupling and phase con- trol can be obtained. In this way, each pixel can be phase controlled such that the entire array can be cou- pled together and operate coherently like a single laser. Alternatively, phase control can be achieved by use of 5,115,445 7 a Fourier transform spatial filter [R. H. Rediker et al., Appl. Phys. Lett. 46, 133 (1985)]. Equivalents This completes the description of the preferred em- bodiment of the invention. It should be understood that those skilled in the art would be capable of devising equivalents by various changes in form and detail with- out departing from the spirit and scope of the invention. Such equivalents are intended to be covered by the following claims. ' I claim: 1. A system for generating a beam of light comprising an array of solid state lasers comprised of: a) an array of solid state gain medium material lasers comprised of: - v a) an array of solid state gain medium material formed of: (i) a body of gain material having first and second opposed surfaces with individual pixel elements formed therein and laterally isolated from each other; (ii) a first mirror formed on said first surface which is reflective of light at a first wavelength; (iii) a second mirror formed on said second surface ‘ which is reflective of light at a second wave- length; and (iv) an array of pumping lasers disposed adjacent said first surface for generating light at said sec- ond wavelength and each pumping laser stimu- lating light emission at said first wavelength in a corresponding pixel element to form a beam of light. ' 2. The system of claim 1 including a transparentther- mally conductive means coupled to at least one surface of the body. 3. The system of claim 1 wherein the pixel elements are isolated by lossy material formed between elements. 4. The system of claim 2 wherein the lossy material is formed by introducing defects which absorb emissions. 5. The system of claim 4 wherein the defects are introduced by particle bombardment. 6. The system of claim 1 further including a body of nonlinear optical material for generating harmonics of the light emission of said gain medium. 7. The system of claim 1- wherein the pumping lasers are bonded to the first mirror on the body. 8. The system of claim 1 further including phase means for moving the beam of light. . 9. The system of claim 8 wherein the phase means comprises addressable phase modulators. 10. The system of claim 1 including combining means for coherently combining the light emission from each pixel into a coherent light beam. 11. The system of claim 10 wherein the combining means is comprised of binary optics. 12. The system of claim 6 wherein the harmonics are at a higher frequency than the light emission. 13. The system of claim 10 wherein the combining means includes an external cavity formed by a feedback mirror. 14. The system of claim 2 wherein the thermally conductive means comprises a body of material taken from the group comprising sapphire or diamond. 15. The system of claim 1 wherein the array is two dimensional. 16. A system for generally a beam of light comprising an array of solid state lasers comprised of: 5 10 15 20 25 30 35 40 45 50 55 65 8 a) an array of solid state gain medium material formed of: (i) a body of gain material having first and second opposed surfaces; (ii) a cavity formed of: light reflective means formed on said first sur- face; and light transparent means formed on said second surface; and wherein the length of said body between the light reflective and light transparent means is sufficient to cause the gain bandwidth of the gain medium to be less than or equal to the frequency separation of the light propagating in several modes within the cavity and such that the frequency of one such mode is within the gain bandwidth and wherein said gain medium material is di- vided into an array of pixel elements; and b) an array of pumping lasers disposed adjacent said first surface for generating light and stimulating the gain material in each adjacent pixel into light emis- sion to form a beam of light. 17. The system of claim 16 wherein the light reflec- tive means reflects light at the frequency of the gain medium and the light transparent means is transparent to such frequency. ‘ 18. The system of claim 17 wherein a light transpar- ent high quality heat dissipating body is longitudinally coupled to said pixel elements. 19. The system of claim 16 further including a body of nonlinear optical material for generating harmonics of the light emission of said gain medium. 20. The system of claim 16 including means for changing the frequency of the stimulated emission of light. _ 21. The system of claim 16 wherein the pumping lasers are bonded to the body. 22. The system of claim 19 further including phase means for moving the beam of light. 23. The system of claim 22 wherein the phase means comprises addressable phase modulators. 24. The system of claim 16 including combining means for coherently combining the light emission from the gain material into a coherent light beam._ 25. The system of claim 24 wherein the combining means is comprised of binary optics. 26. The system of claim 16 wherein the array is two dimensional. 27. A method of generating a beam of light compris- ing the steps of: a) disposing a solid state gain medium between two mirrors forming a cavity and laterally isolating the gain medium to form individual pixels; and b) pumping the gain medium with light. 28. The method of claim 27 wherein the distance, 1, between the mirrors satisfies the inequality: l<c/2nvg where c is the speed of light, his the refractive index in the gain medium, and v; is the gain bandwidth of the gain medium. 29. The method of claim 27 wherein the mirrors are formed by depositing coatings on opposing surfaces of the gain medium. 30. The method of claim 27 wherein the mirrors are bonded to opposing surfaces of the gain medium. 31. The method of claim 27 wherein the gain medium is NszAG 32. The method of claim 27 wherein the pixels are isolated by forming lossy sites in the gain medium. 5,115,445 9 33. The method of claim 32 wherein the sites in the gain medium are formed by particle bombardment 34. A method for generating a beam of light compris— ing the steps of: a) forming an array of solid state gain medium mate- rial by: . (i) providing a body of gain material having first and second planar opposed surfaces; (ii) forming individual pixel elements therein and laterally isolating each from each other; (iii) disposing the body between a light reflectiver means and a light transparent means; and b) stimulating light emission in a pixel element to form a beam of light. 35. The method of claim 34 including coupling a - transparent thermally conductive means to at least one planar surface of the body. 36. The method of claim 34 wherein the pixel ele- ments are isolated by forming lossy material between elements. 37. The method of claim 34 wherein the lossy mate- rial is formed by dopant diffusion into the solid state material. - 38. The method of claim 34 wherein the elements are isolated by ion bombardment. 39. The method of claim 34 further including forming a body of nonlinear optical material for generating har- monics of the light emission of said gain medium. 40. The method of claim 34 wherein the emission is stimulated by pumping lasers bonded to the partly light reflective means on the body. 41. The method of claim 34 further including the step of changing the phase of the emission to steer the beam of light. 42. The method of claim 41 wherein the phase is changed by addressable phase modulators. 43. The method of claim 34 including the step of coherently combining the light emission from each pixel into a coherent light beam. 10 15 20 25 30 35’ 40 45 50 SS 65 10 44. The method of claim 34 wherein the gain medium is NszAG and the separation between mirrors is in the range of several hundred um. 45. The method of claim 34 wherein the gain medium is Nd pentaphosphate and the separation between the mirrors is in the range of 10-100 um. 46. The method of claim 34 wherein semiconductor diode lasers are used to stimulate emission by the pixel elements. 47. The method of claim 46 wherein the semiconduc- tor diode lasers are bonded to one of the mirrors. 48. A system for generating a multi-frequency beam of light comprising an array of solid state lasers com- prised of: a) an array of solid state gain medium material formed of: (i) a body of gain material having first and second opposed surfaces with individual pixel elements formed therein and laterally isolated from each other; (ii) a light reflective means formed on said first surface; ~ (iii) a light transparent means formed on said sec- ond surface; and (iv) an array of pumping lasers disposed adjacent said first surface for generating light and each pumping laser stimulating light emission in a corresponding pixel element to form a beam of light, a plurality of said pixel elements emitting light of different frequencies. 49. The system of claim 48 including means for focus- ing the light from said pixel elements on an optical fiber. 50. The system of claim 48 wherein the array is two dimensional. 51. A method of generating a multi-frequency beam of light comprising the steps of: a) disposing a solid state gain medium between two mirrors and forming a cavity and laterally isolating the gain medium to form individual pixels, a plural- ity of pixels being tuned to different frequencies. 52. The method of claim 51 wherein the gain medium is pumped by lasers to emit light from the pixels and coupling said light to an optical fiber. # * * t I! ...
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US5115445_TOT - United States Patent [19] Mooradian [54]...

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