EE241_Sp05_Hw1_SOL - JanM.Rabaey Homework1 EECS247 Solution Spring2005 1.SPICEmodels Body-effect parameter Vth = Vth0 2 F VSB 2 F Fp:= 0.3V VSB:= 1V For

# EE241_Sp05_Hw1_SOL - JanM.Rabaey Homework1 EECS247 Solution...

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UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences Jan M. Rabaey Homework 1 EECS 247 Solution Spring 2005 1. SPICE models Subscribe to view the full document.

V thp_extrap2 0.713V = V thn_extrap2 0.701V = V thp_extrap2 V gsp 0A ( ) := V thn_extrap2 V gsn 0A ( ) := V gsp I dp ( ) 1 m p2 I dp y p2 ( ) x p2 + := V gsn I dn ( ) 1 m n2 I dn y n2 ( ) x n2 + := y p2 11.46 μ A := x p2 0.958V := m p2 46.69 10 6 S := y n2 34.87 μ A := x n2 0.882V := m n2 192.332 10 6 S := For |Vbs|=0.5V V thp_extrap1 0.837V = V thn_extrap1 0.795V = V thp_extrap1 V gsp 0A ( ) := Body-effect parameter, γ V th V th0 γ 2 − φ F V SB + 2 − φ F ( ) + = φ Fp 0.3V := V SB 1V := For |Vbs|=1V m n1 180.42 10 6 S := x n1 0.943V := y n1 26.66 μ A := m p1 44.19 10 6 S := x p1 1.059V := y p1 9.795 μ A := V gsn I dn ( ) 1 m n1 I dn y n1 ( ) x n1 + := V gsp I dp ( ) 1 m p1 I dp y p1 ( ) x p1 + := V thn_extrap1 V gsn 0A ( ) := S 38mV/decade = S 24mV/decade = For 77K: S 97mV/decade = S 93mV/decade = For 298K: PMOS NMOS Slope factor b) Subthreshold slopes Values reported in the model file is 0.55 and 0.63 for NMOS and PMOS respectively γ p 0.615 V = γ n 0.483 V = γ p V thp_extrap1 V thp0_extrap 2 − φ Fp V SB + 2 − φ Fp ( ) := γ n V thn_extrap1 V thn0_extrap 2 − φ Fn V SB + 2 − φ Fn ( ) := V SB 1 V := φ Fp 0.443V := and φ Fn 0.443V := Solving the above threshold voltage equation for the two extrapolated threshold voltage with source bulk reverse bias of 1V and 0.5 V respectively, we get V th V th0 γ 2 − φ F V SB + 2 − φ F ( ) + = Subscribe to view the full document.

Zoomed-in plots of the log(Id) at low Vgs: Leakage Current at 0Vgs: NMOS PMOS For 298K: I st 5.67pA = I st 3.156pA = For 77K: I st 45.9zA = I st 112.15zA = | | | | ds th V V DIBL = From the above plots the DIBL factors are calculated to be 5e -6 and 2e -3 for NMOS and PMOS respectively. 2. Technology scaling Subscribe to view the full document.

Eq. (1) t p_035_FO1 t p0_035 1 f 035_FO1 γ + = f 035_FO1 C L_035_FO1 C in_035_FO1 := C L_035_FO1 4.4362f F := C in_035_FO1 2.577f F := t p_035_FO1 64.28p s = t p_035_FO1 T ringosc_035 10 := T ringosc_035 642.798p s := Intrinsic delay, tp C in_035 3.33f F := Total input capacitance, signal OP("/M2" "??") betaeff 369.7u cbb 250.1a cbd -397.9z cbg -247.1a cbs -2.609a cdb -3.826z cdd 173.3a cdg -173.3a cds 16.43z cgb -250.1a cgd -172.9a cgg 593.8a cgs -170.8a cjd 732.5a cjs 0 csb -5.739z csd -32.08y csg -173.3a css 173.3a signal OP("/M3" "??") betaeff 169.8u cbb 439.7a cbd -819.5a cbg -901.1z cbs 380.7a cdb -174.3a cdd 1.565f cdg -1.369f cds -21.96a cgb -91.02a cgd -1.31f cgg 2.739f cgs -1.338f cjd 2.836f cjs 0 csb -174.3a csd 564.2a csg -1.369f css 979.2a a) For 0.35 μ m inverter 2 E sw_035 38.11f J := Active energy consumption Simulated Esw t p0_035 28p s := γ 1.3354 := Solving Eq. 1 and 2 for tp0_035 and γ Eq. (2) t p_035_FO4 t p0_035 1 f 035_FO4 γ + = t p_035_FO4 = f 035_FO4 C L_035_FO4 C in_035_FO4 := C Subscribe to view the full document. • Spring '12
• aaa
• Threshold voltage, ITRS, active power, active energy consumption

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