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Unformatted text preview: metal part that has a EN of about 1.7 results in
characteristics. Calculations by Pauling show that been permanently bent
isothermally and reversibly a bond that is 50% ionic and 50% covalent. Appendix A includes a chart that relates
is said to have undergone plastic deformation.
the magnitude of EN to the percent ionic characteristic of the bond. In fact, one of the
t composition from either
reasons pn the failure of the r R ratio A microelectronics device comfor junction diode
in predicting the correct CN in some “ionic”
compounds is the mixed ionic/covalent characteristics of the bonds in these materials.
Manyposed of adjacent bonds with mixed ionic/covalent characteristics. Conceramics contain primary layers of p-type and n-type semitransformation, during
sider theconductors compound SiO2 . Each Si atom EN 1in shares direction
bonding in the that serves to pass current .9 one one electron
isothermally and reversibly pair with each of its nearest-neighbor O atoms EN 3.44 . The greater electronegativity
while however, results in blocking current in the oppositethe Si
(essentially) a partial
t composition from either of of the O atoms, atoms. The shared electrons transfercovalentshared electrons the electron
atoms todirection. from a simple imply
ampliﬁer to a complete
transfer gives the bond some ionic characteristics. The EN of 1.54 suggests that the
miniature digital 55% covalent.
point 45% ionic A “mistake” in the material that involves
Si @ O bond is defect and computer known as a microprocessor.
ecule in which the spatial
Anothersingle materials ion,may exhibit site, accumulation of mobile For
class of atom, that lattice an intermediate bond type is the metals.
ainterfacial polarization The or interstitial position.
The bonds in the Group IA metals are predominately metallic, but as the valence of the
always different from that of
charge in an atom near grain boundaries the bonds begin
example, if moving from is to right in at a regularor surfaces.
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