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Unformatted text preview: f contamina
Schottky defect Small located on
stagnant pools of electrolyte cation andh
clusters that are
sections of metal. formed in ionic solid
ratio density The number of atoms o
planarin these clusters is adjusted to m
on a crystallographic plane per unit area
screw dislocation A dislocation th
plastic deformation Deformation that
making a cut in a part that has been
for example, a metalcrystal and displacp
is said to region relative to the bottom
the cut have undergone plastic deforma
FIGUREpn junction the cut. The Burgers vecto
2.2–1 A sche- to diode
matic illustration of the
dislocation is parallel of p-type and n
Bohr model of a Zn atom adjacent layers to the dislocatio
showing conductors that serves to pass current in
self-diffusion The mechanism by w
of electrons in the subshells. while (essentially) blocking current in the
diffuses in itself.
semicoherent interface An interfa
point defect A “mistake” in the mater
aphases atom, ion, lattice site, orin the a
single where the differences intersti
of the atoms forming the interface ca
example, if an atom is missing at a regul
point defect is said to have been formed.
semiconductor Ahe negative ratio o
T class of material
strain dividedelectrical conductivity as i
increase in by the longitudinal strain
polarization Separation of positive an
charge in a material, usually slope of the
shear modulus G The by an electr
vector sum of curve in the elastic regio
shear strain all the dipoles in a materia
The electron subshells are identiﬁed using an alphanumeric code in whichsizenumber
The yield stress increases with decreasing grain the
volume is the polarization.
representsaccordingn to the letter gives the value of l using the following convention:
the value of and the Petch-Hall equation.
polycrystalline Describing a solid, usu
s for l 0, p for l 1, d for l 2, and f for l 3. The Pauli exclu...
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