901082 521011 300 1021041 59107 500 2691030 81106 700

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Unformatted text preview: nts will be deducted. GaAsxSb1‐x: EG = 0.79 eV GaxIn1‐xAs: EG = 0.85 eV Q4: a), b) From Table 3.1, we can get that D0 = 1460 cm2/s and ΔH = 5.02 eV = 8.042 * 10‐19 J for bulk Si. Hence the bulk diffusivity at T(K) of Si can be calculated by 8.042 * 10−19 2 D = D0 exp(−ΔH / kT ) = 1460 exp− cm / s. −23 1.380 * 10 * T T(oC) Dbulk (cm2/s) € Ds (cm2/s) 25 1.90*10‐82 5.2*10‐11 300 1.02*10‐41 5.9*10‐7 500 2.69*10‐30 8.1*10‐6 700 1.44*10‐23 3.8*10‐5 The surface diffusivity Ds of...
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