HW5_Sol - HW5 Sol 1 2 p I D = mn z rnd E = 2 r n z nE f p m...

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HW5 Sol 1. L Z L r r r thus r L r L r L r L r L with L r r Let V V V V C I r r I r r d V V C dr I r dr d Q r I nE z r E rnd z I D D T G n D D V T G n D r r n n D c n c n D D = 2245 + - = + << + = - - = = - - - = = = = 1 1 2 1 2 1 1 1 1 1 2 2 0 1 2 1 2 0 0 2 0 2 ) ln( 2 .... 2 1 ) 1 ln( ) 2 1 ) (( 2 ) ln( 1 1 ) ( 2 1 2 2 2 1 π πμ ϕ μ φ
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4. Diode-Connected MOS Transistors . Shown below are a diode and diode-connected n MOS and p MOS transistors. The direction of current flow and the sign of the voltage drop are indicated in each case. For the diode connected n MOS transistor, “forward biased” means that the drain/gate is at a higher potential than the source. Increasing the amount of forward bias will increase the current dramatically, because we are increasing V GS . Under “reverse bias” conditions, what was the drain/gate terminal becomes the source/ gate terminal and what was the source becomes the drain. In this case,
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This note was uploaded on 09/15/2007 for the course ECE 3150 taught by Professor Spencer during the Spring '07 term at Cornell.

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HW5_Sol - HW5 Sol 1 2 p I D = mn z rnd E = 2 r n z nE f p m...

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