5 v see table 3 2 p 103 vt0 v vdsatv k av2

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Unformatted text preview: iven below. Assume W/L = 1. Table 1: Parameters for 0. 25 µ m CMOS process with VDD = 2.5 V (see Table 3- 2, p. 103) VT0 (V) VDSAT(V) k’ (A/V2) γ (V0.5) λ (V- 1) NMOS 0.43 0 0.63 115 x 10- 6 0.06 - 6 PMOS - 0.4 0 - 1 - 30 x 10 - 0.1 a) NMOS: V_GS = 2.5 V, V_DS = 2.5 V, PMOS: V_GS = - 0.5 V, V_DS = - 1.25 V b) NMOS: V_GS = 3.3 V, V_DS = 2.2 V, PMOS: V_GS = - 2.5 V, V_DS =...
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This note was uploaded on 06/08/2013 for the course ECE 108 taught by Professor Shayan during the Spring '13 term at San Diego.

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