21 will be used to temperatures the more precise

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Unformatted text preview: o different in Eq. (2.1) will be used to temperatures. The more precise formula for compute this: 300 1.0 10 cm 200 1.1 10 cm For both 300K and 200K, the majority carrier hole concentration is just equal to 6 10 cm However, the minority carrier electron concentrations depends upon 300 200 : 16.7 cm 2.02 10 cm 6 J&B P2.32 Then 4 1.62 2 6.17 10 cm 10 cm We can see that 1.62 10 cm 1 10 cm This is because ≫ does not hold in this case 1 10 cm 7 J&B P2.35 Indium is an acceptor impurity. The material is p-type. At 300 K, the intrinsic carrier concentration for silicon is 1.0 10 cm . Acceptor doping concentration is 8 10 cm . Thus 8 ≫ , and we have 10 cm 1.25 cm Using total impurity concentration of 8 10 cm , we can extract the electron and hole mobilities by either reading them out from Figure 2.8, or plugging in the value of in the approximated mobility equations: 96 cm / V ∙ s 50 cm / V ∙ s Conductivity Since ≫ The electron part can be neglected, and thus 640 Ω ∙ cm Resist...
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This note was uploaded on 06/28/2013 for the course EE 331 taught by Professor Taicheng during the Fall '08 term at University of Washington.

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