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Unformatted text preview: o different
in Eq. (2.1) will be used to
temperatures. The more precise formula for
compute this: 300 1.0 10 cm 200 1.1 10 cm For both 300K and 200K, the majority carrier hole concentration is just equal to
6 10 cm However, the minority carrier electron concentrations depends upon
300 200 : 16.7 cm 2.02 10 cm 6 J&B P2.32 Then
4
1.62 2
6.17 10 cm 10 cm We can see that
1.62 10 cm 1 10 cm This is because
≫
does not hold in this case 1 10 cm 7 J&B P2.35
Indium is an acceptor impurity. The material is ptype.
At 300 K, the intrinsic carrier concentration for silicon is 1.0 10 cm . Acceptor doping concentration is 8 10 cm . Thus 8 ≫ , and we have 10 cm
1.25 cm Using total impurity concentration of
8 10 cm , we can extract
the electron and hole mobilities by either reading them out from Figure 2.8, or
plugging in the value of
in the approximated mobility equations:
96 cm / V ∙ s
50 cm / V ∙ s
Conductivity Since
≫
The electron part can be neglected, and thus
640 Ω ∙ cm
Resist...
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This note was uploaded on 06/28/2013 for the course EE 331 taught by Professor Taicheng during the Fall '08 term at University of Washington.
 Fall '08
 Taicheng

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