ECE_315_Practice_exam

ECE_315_Practice_exam - Final Exam ECE 315 Spring 2006 Open...

• Notes
• 501844684_ch
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Final Exam ECE 315 Spring 2006 Open Book and two pages of notes 1. 10pts . Below is a semiconductor which has been patterned into the shape illustrated. The thickness of the material is 1um with a mobility of 1000 cm 2 /V- sec. Assume the fields transform abruptly at the interface. The doping in region 1 and region 3 is 1x10 17 cm -3 the doping in region 2 is 1x10 16 cm 3 L 1 =10um, L 2 =50um, L 3 =20um and W 1 =100um, W 2 =10um, W 3 =50um a. Calculate the total resistance of each layer. b. What is the current in each layer if a voltage of 1V is applied to as shown c. What is the electron drift velocity in each layer d. If the voltage is increased and the saturation velocity is 1x10 7 cm/sec. What is the voltage V A where saturation velocity is achieved in the materia 2. 15pts . For a MOS Capacitor biased as shown below V tn =1V. W 3 W 1 L 1 L 3 Contact V W 2 L 2 Region 3 Region 2 Region 1

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a. Sketch the charge vs distance for (V A =1V and V B =0) and (V A =1V and VB=.5V) b. Sketch the Electic Field vs distance. for (V A =1V and V B =0) and(V A =1V and VB=.5V)
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• Spring '07
• SPENCER
• Microelectronics, gate voltage, drain voltage, small signal diagram, input ac voltage, minimal common-mode voltage

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