ee481Lecture6 - . . i B2 hole recombination. .. i E total...

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RIT Professor Bowman 1 Lecture 6 – Bipolar Junction Transistor Device Structure and Operation •H i s t o r y • Regions of Operation • Equivalent Circuit Models
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RIT Professor Bowman 2 npn and pnp Transistor npn pnp
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RIT Professor Bowman 3 BJT Modes of Operation Mode EB Junction CB Junction Cutoff Reverse Reverse Active Forward Reverse Reverse Active Reverse Forward Saturation Forward Forward
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RIT Professor Bowman 4 Current Flow in a BJT
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RIT Professor Bowman 5 Minority Carrier Concentration for an npn BJT in the Active Region
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RIT Professor Bowman 6 Components of Current in a BJT •i C collector current………. •i S saturation current……. . •i B1 hole injection
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Unformatted text preview: . . i B2 hole recombination. .. i E total of base and collector current. T BE V v S e I / W N n qD A A i n E / 2 ( ) T BE V v p D i p E e L N n qD A / 2 / T BE V v A b i E e N qWn A / 2 2 / 1 C B C E i i i i 1 + = + = RIT Professor Bowman 7 Large Signal BJT Models voltage controlled source current controlled source RIT Professor Bowman 8 Cross-section of an npn BJT RIT Professor Bowman 9 BJT Model in Reverse Active Region RIT Professor Bowman 10 BJT Ebers-Moll Model RIT Professor Bowman 11 BJT in Saturation Mode...
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This note was uploaded on 04/07/2008 for the course ELECTRONIC 0301-481 taught by Professor ? during the Fall '07 term at RIT.

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ee481Lecture6 - . . i B2 hole recombination. .. i E total...

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