Assume any differences in the carrier effective

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Unformatted text preview: carrier effective masses may be neglected. With the differences in effective masses neglected, ( ) 7 ECE 340 HW Assignment 2 – Solutions Summer 2011 6. [2 points] – An unknown semiconductor has and . It is doped with donors, where the donor level is 0.2 eV below . Given that is 0.25 eV below , calculate and the concentration of electrons and holes in the semiconductor at 300 K. ( ) ( ( ) ) √ Note ( √ ) may also be used 7. (a) [2 points] – A Si sample is doped with donors. The Fermi level is 0.36 eV above boron atoms and a certain number of shallow at 300 K. What is the donor concentration ? ( ) ( ( ) ( ) ) ( ) (b) [2 points] – A Si sample contains Indium acceptor atoms and a certain number of shallow donors. The Indium acceptor level is 0.16 eV above , and is 0.26 eV above at ) Indium atoms are un-ionized (i.e. neutral)? 300 K. How many ( ( ) ( Unionized In = [ ( )] 8 ) ( )...
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This note was uploaded on 11/13/2013 for the course ECE 340 taught by Professor Leburton during the Fall '11 term at University of Illinois, Urbana Champaign.

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