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Unformatted text preview: carrier effective masses may be neglected.
With the differences in effective masses neglected,
( ) 7 ECE 340 HW Assignment 2 – Solutions Summer 2011 6. [2 points] – An unknown semiconductor has
. It is doped with
donors, where the donor level is 0.2 eV below . Given that
is 0.25 eV below , calculate
and the concentration of electrons and holes in the semiconductor at 300 K.
( ) (
( ) ) √
Note ( √ ) may also be used 7.
(a) [2 points] – A Si sample is doped with
donors. The Fermi level is 0.36 eV above boron atoms and a certain number of shallow
at 300 K. What is the donor concentration ?
( ( ) ( )
) ( ) (b) [2 points] – A Si sample contains
Indium acceptor atoms and a certain number of
shallow donors. The Indium acceptor level is 0.16 eV above , and
is 0.26 eV above at
) Indium atoms are un-ionized (i.e. neutral)?
300 K. How many (
( Unionized In = [ ( )] 8 ) ( )...
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This note was uploaded on 11/13/2013 for the course ECE 340 taught by Professor Leburton during the Fall '11 term at University of Illinois, Urbana Champaign.
- Fall '11